RodrÃguez, R.; González, B.; GarcÃa, J.; Toulon, G.; Morancho, F.; Núñez, A.
DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs. Electronics 2018, 7, 210.
https://doi.org/10.3390/electronics7100210
AMA Style
RodrÃguez R, González B, GarcÃa J, Toulon G, Morancho F, Núñez A.
DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs. Electronics. 2018; 7(10):210.
https://doi.org/10.3390/electronics7100210
Chicago/Turabian Style
RodrÃguez, Raúl, Benito González, Javier GarcÃa, Gaetan Toulon, Frédéric Morancho, and Antonio Núñez.
2018. "DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs" Electronics 7, no. 10: 210.
https://doi.org/10.3390/electronics7100210
APA Style
RodrÃguez, R., González, B., GarcÃa, J., Toulon, G., Morancho, F., & Núñez, A.
(2018). DC Gate Leakage Current Model Accounting for Trapping Effects in AlGaN/GaN HEMTs. Electronics, 7(10), 210.
https://doi.org/10.3390/electronics7100210