Scalable Fabrication of 2D Semiconducting Crystals for Future Electronics
Abstract
:1. Introduction
2. Scalable Synthesis Techniques for TMDCs
2.1. Vapor Phase Deposition
2.1.1. Solid-Precursor VPD
2.1.2. Gas-Precursor VPD
2.2. Thermal Decomposition
2.3. Magnetron Sputtering
2.4. Molecular Beam Epitaxy
3. Advanced Engineering for Materials, Heterostructures and Devices
3.1. TMDC Alloys
3.1.1. MoS2(1−x)Se2x Alloys
3.1.2. Mo1−xWxS2 Alloys
3.2. 2D Heterostructures
3.2.1. TMDC/Graphene Heterostructures
3.2.2. TMDC/BN Heterostructures
3.2.3. TMDC/TMDC Heterostructures
3.3. Wafer-Scale Device Engineering
3.3.1. Direct Growth of TMDC at Controlled Locations
3.3.2. Multi-Level Stacking of TMDC Devices
4. Discussions and Outlook
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Li, J.; Östling, M. Scalable Fabrication of 2D Semiconducting Crystals for Future Electronics. Electronics 2015, 4, 1033-1061. https://doi.org/10.3390/electronics4041033
Li J, Östling M. Scalable Fabrication of 2D Semiconducting Crystals for Future Electronics. Electronics. 2015; 4(4):1033-1061. https://doi.org/10.3390/electronics4041033
Chicago/Turabian StyleLi, Jiantong, and Mikael Östling. 2015. "Scalable Fabrication of 2D Semiconducting Crystals for Future Electronics" Electronics 4, no. 4: 1033-1061. https://doi.org/10.3390/electronics4041033