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Electronics 2015, 4(4), 969-978;

Electrical Compact Modeling of Graphene Base Transistors

CNRS and University of Bordeaux, IMS UMR 5218, Talence 33400, France
DIEGM—University of Udine via delle Scienze, 208 22100 Udine, Italy
Author to whom correspondence should be addressed.
Academic Editor: Frank Schwierz
Received: 30 July 2015 / Revised: 22 October 2015 / Accepted: 2 November 2015 / Published: 18 November 2015
(This article belongs to the Special Issue Two-Dimensional Electronics - Prospects and Challenges)
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Following the recent development of the Graphene Base Transistor (GBT), a new electrical compact model for GBT devices is proposed. The transistor model includes the quantum capacitance model to obtain a self-consistent base potential. It also uses a versatile transfer current equation to be compatible with the different possible GBT configurations and it account for high injection conditions thanks to a transit time based charge model. Finally, the developed large signal model has been implemented in Verilog-A code and can be used for simulation in a standard circuit design environment such as Cadence or ADS. This model has been verified using advanced numerical simulation. View Full-Text
Keywords: graphene; transistor; GBT; circuit; compact; SPICE; electrical; model; large signal graphene; transistor; GBT; circuit; compact; SPICE; electrical; model; large signal

Figure 1

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Frégonèse, S.; Venica, S.; Driussi, F.; Zimmer, T. Electrical Compact Modeling of Graphene Base Transistors. Electronics 2015, 4, 969-978.

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