1. Introduction
The energy crisis and environmental issues have compelled the rapid development of the new energy vehicle industry. Mainstream new energy vehicles currently on the market primarily include electric vehicles (EVs), hybrid electric vehicles (HEVs), plug-in hybrid electric vehicles (PHEVs), range-extended electric vehicles (RE-EVs), and fuel cell vehicles (FCVs) [
1]. Among these, FCVs are gaining increasing user favor due to their fast-refueling capability, the minimal impact of temperature on their driving range, and water being their only by-product. A typical structure of the FCV powertrain is shown in
Figure 1; due to the slow dynamic response of FCs, they are used to deliver average power. The power battery is directly connected to the vehicle’s DC bus and is responsible for delivering and recovering instantaneous power [
2]. FCVs come in two forms: commercial vehicles and passenger vehicles. Due to sufficient installation space, commercial FCVs are equipped with high-power (150–300 kW) fuel cell (FC) stacks, mainly used for mountainous terrain, heavy loads, and long-distance driving conditions. Conversely, passenger FCVs have limited installation space and are equipped with low-power FC engines (below 50 kW), serving as a supplement to EVs and primarily being used for flat terrain, light loads, and short-distance driving conditions. FCs typically operate in a constant-current output mode, where the stack current is related to factors such as the fuel supply rate, pressure, temperature, and humidity, etc. [
3]. The rated power of an FC determines its output voltage level. Therefore, in passenger FCVs, a high-gain step-up converter is required to achieve voltage matching between the low-power FC stack and the vehicle’s DC bus (400–800 V).
The application scenario of passenger FCVs imposes the following “three requirements” on the DC/DC converter: (1) a high voltage gain, preferably achieved at a relatively low duty cycle (0.6–0.7) to enable precise output voltage control under a flat
d-
M (duty cycle–voltage gain) curve [
4]; (2) a wide input voltage range, as the FC exhibits “soft” output attribute, necessitating a broad voltage regulation range from the DC/DC converter [
5]; (3) a low input current ripple—over prolonged operation periods, the performance of FC gradually deteriorates due to intricate driving conditions and component ageing (high input current ripple exacerbates this performance degradation), requiring the input current ripple of the directly connected DC/DC converter to be as low as possible [
6,
7]. As a power conversion device, the following “three requirements” should also be considered. (1) Low voltage stress, as high stress increases the risk of device failure, reduces overall vehicle reliability, and raises converter cost and volume [
8]. (2) Common ground of input–output; considering vehicle driving safety, EMI should be minimized, requiring the DC/DC converter to have a common ground attribute of input–output. (3) High efficiency, maintaining efficient operation across the full load range to improve vehicle’s overall energy utilization and driving range.
Considering factors such as efficiency, vehicle space, and stress, non-isolated DC/DC converters are typically utilized in FCVs. The theoretical high gain of a conventional non-isolated Boost is difficult to achieve in practice, due to limitations from parasitic parameters, making it unsuitable for the actual requirements of FCV powertrains [
9]. To address these issues, researchers have designed various high-gain DC/DC converters. Initially, the goal was simply to enhance the voltage gain of DC/DC converters. Ref. [
9] combined quasi-Z sources with switched capacitors, Ref. [
10] cascaded Z sources and switched capacitors, while Ref. [
11] cascaded switched inductors with voltage multipliers. However, these topologies lack a common ground attribute. To avoid extra EMI, it is necessary to enhance the voltage gain while simultaneously addressing the issue of common ground of input–output. Ref. [
5] cascaded a half Z source (IWJ structure [
12]) with voltage multipliers, Ref. [
13] mixed a voltage lifting circuit with a quadratic Boost converter, and Ref. [
14] combined a Z source with a voltage multiplier. Although the issue of input–output common ground was resolved, these topologies exhibited pulsating input current. Furthermore, to address the issue of pulsating input current while enhancing the voltage gain, Ref. [
15] cascaded the interleaved structure with the switched capacitor, and Ref. [
16] cascaded Boost and a clamped capacitor with a three-level structure. In Refs. [
17,
18], the Boost converter was combined with a modified voltage multiplier, while in Refs. [
19,
20], the Cuk converter was integrated with a quadratic Boost or Boost converter, achieving high voltage gain under a continuous input current. However, these topologies, in turn, introduced the previous issue of the non-common ground of input–output. So, can the voltage gain be enhanced while ensuring both conditions—continuous input current and the common ground of input–output? Ref. [
21] employed a hybrid structure interleaving with a voltage multiplier. However, the voltage stresses of the capacitors were large. Finally, to address the issue of high voltage stress, in Ref. [
22], the quasi-Z source structure was cascaded with the three-level structure, which improved the voltage gain with the premise of ensuring the continuous input current, common ground, and low device voltage stress, but the duty cycle range was 0.5–0.75, which increased the difficulty in controller design. The resolution of existing issues is frequently accompanied by the emergence of new challenges. Despite significant efforts to enhance voltage gain through various approaches, existing high voltage step-up converters for passenger FCVs struggle to simultaneously achieve continuous input current, common grounding, and low voltage stress. This persistent trade-off among key performance indicators—ranging from pulsating input current and non-common ground configuration to high device voltage stress and limited duty cycle ranges—reveals a critical research gap in developing a DC/DC converter that holistically satisfies all practical FCV powertrain requirements.
Therefore, this study is dedicated to designing DC/DC converters that address the current research gap. Based on the author’s previous research [
8], the quadratic Boost, quasi-Z source, and switched-inductor impedance networks demonstrate outstanding voltage step-up capabilities, continuous input current, and common ground attributes, effectively balancing the requirements of passenger FCVs. Considering that the interleaved structure can achieve ripple elimination, this paper rationally integrates these impedance networks to construct three high-gain DC/DC converters: the Interleaved-Quadratic Boost (I-QB), the Interleaved-Quasi-Z source (I-QZS), and the Interleaved-Switched-Inductor (I-SI). Detailed analysis, modeling, and experimental verification are performed using the I-QB converter as an example. The results demonstrate that the I-QB converter has the following advantages:
Extremely high voltage gain under a flat d-M curve;
Practically achievable wide input voltage range;
Low input current ripple with inductor currents cancellation;
Low voltage stress;
Common ground of input–output;
Satisfactory efficiency.
In
Section 2, three types of high-voltage-gain DC/DC converters are given. The steady-state characteristics of the I-QB converter are analyzed in
Section 3.
Section 4 provides the comparisons. In
Section 5, the experimental validation is provided.
Section 6 discusses the conclusions.
3. Analysis of the I-QB Topology
3.1. Topology Selection
Due to space constraints, this paper will select one topology for analysis and verification. Introducing a quasi-Z source impedance network would introduce (1-2d) in the denominator of the converter’s voltage gain function. This would result in an extremely steep d-M curve. While this avoids the occurrence of the limit duty cycle, even minor changes in the duty cycle would cause significant fluctuations in the output voltage. When system disturbances require adjusting the duty cycle, unacceptable output voltage overshoot could easily occur, posing challenges for controller design. Moreover, the I-SI converter requires significantly more components than the I-QB and I-QZS converters. Although the I-SI converter offers a higher voltage gain, the excessive component count makes it challenging to improve the efficiency and power density. After weighing the trade-offs, this paper selects the I-QB topology as an example to demonstrate the feasibility and effectiveness of the proposed topologies. The analysis method for I-QB topology is applicable to both the I-QZS and I-SI topologies. The conclusions obtained for the I-QB topology can be appropriately extended to the I-QZS and I-SI topologies.
3.2. Topology and Operating Principles
The I-QB converter consists of four inductors (L1–L4), six diodes (D1–D6), four capacitors (C1–C4), and two switches (S1 and S2). Uin is the input voltage, and Uo is the output voltage. The interleaved structure consisting of inductor L1 and inductor L3 in parallel can reduce the input current ripple. The step-up structure, which consists of inductors L1 and L2, diodes D1 and D2, and capacitor C1 (or inductor L3 and inductor L4, diodes D3 and D4, and capacitor C2), can expand the input voltage operating range and enhance the voltage gain. The voltage multiplier cell consisting of capacitor C3, diode D5, and D6 can further increase the voltage gain.
Assume that all devices in the I-QB converter are ideal, meaning that all power semiconductor devices have zero on-resistance, no current flows when they are turned off, and the turn-on time and turn-off time of switches are zero. We also ignore the equivalent series resistance (ESR) of the inductors and capacitors. The relationship between d1 and d2 can be recorded as d1 = d2 = d, where d1–d2 denote the duty cycles of S1–S2, respectively. The phase difference between the gate–source driving signals of S1 and S2 is 180. When the I-QB converter operates in the continuous conduction mode (CCM), there are four switching states recorded as “S1S2” in a switching cycle, S1S2 = {00,01,10,11}. Moreover, the sequence of the switching states in one cycle is related to the duty cycle ranges of S1 and S2. The sequence I “10-00-01-00-10” appears within the duty cycle range of 0–0.5, while the sequence II “11-10-11-01-11” is obtained within the duty cycle range of 0.5–1.
The key operating waveforms of the I-QB converter are shown in
Figure 3. The output current is
Io, and the currents of L
1, L
2, L
3, and L
4 are
IL1,
IL2,
IL3, and
IL4. Define the voltage between the cathode and the anode of the diode as the voltage stress of the diode.
TS indicates the period of the PWM driving signal. The energy flows and equivalent circuit diagrams of the I-QB converter in different operating modes are shown in
Figure 4.
3.2.1. S1S2 = 11 (S1 and S2 Are ON)
As shown in
Figure 4a, in this state, diodes
D1,
D3,
D5, and
D6 are reversed biased and there are five current loops in the circuit: (1) DC-source
Uin is charged to
L1 through
D2 and
S1; (2)
C1 charges
L2 through
S1; (3) DC-source
Uin charges
L3 through
D4 and
S2; (4)
C2 charges
L4 through
S2; and (5) the capacitor
C4 supplies energy to the load
R. Moreover, the currents
IL1,
IL2,
IL3, and
IL4 increase linearly.
3.2.2. S1S2 = 10 (S1 Is ON, S2 Is OFF)
As shown in
Figure 4b, diodes
D1,
D4, and
D6 are reverse biased and there are five current loops in the circuit: (1) DC-source
Uin charges
L1 by
D2 and
S1; (2) the inductor
L2 is charged by the capacitor
C1 through
S1; (3) DC-source
Uin and inductor
L3 charge capacitor
C2 through diode
D3; (4) DC-source
Uin, inductor
L3 and inductor
L4 are connected in series to charge
C3 through
D3,
D5, and
S1; and (5) the capacitor
C4 supplies energy to the load
R. In addition, the inductor currents
IL1 and
IL2 increase linearly, and
IL3 and
IL4 decrease linearly.
3.2.3. S1S2 = 01 (S1 Is OFF, S2 Is ON)
As shown in
Figure 4c, diodes
D2,
D3, and
D5 are reverse biased and the circuit has five current loops: (1) DC-source
Uin and inductor
L1 charges capacitor
C1 through
D1; (2) DC-source
Uin, inductors
L1,
L2 and capacitor
C3 are connected in series to supply the load
R; (3) DC-source
Uin, inductors
L1,
L2 and capacitor
C3 are connected in series to supply power to capacitor
C4; (4) inductor
L3 charged by DC-source
Uin through
D4 and
S2; (5) and capacitor
C2 charges
L4 through
S2. Moreover, the inductor currents
IL1 and
IL2 decrease linearly, while
IL3 and
IL4 increase linearly.
3.2.4. S1S2 = 00 (S1 Is OFF, S2 Is OFF)
As shown in
Figure 4d, diodes
D2 and
D4 are reverse biased and the circuit has six current loops: (1) DC-source
Uin and inductor
L1 charges capacitor
C1 through
D1; (2) DC-source
Uin and inductor
L3 charge capacitor
C2 through diode
D3; (3) DC-source
Uin, inductors
L1,
L2 and capacitor
C3 are connected in series to supply the load
R; (4) DC-source
Uin, inductors
L1,
L2 and capacitor
C3 are connected in series to supply power to capacitor
C4; (5) DC-source
Uin, inductors
L3,
L4 are connected in series to supply the load
R; and (6) DC-source
Uin, inductors
L3,
L4 are connected in series to supply power to capacitor
C4. Moreover, the currents
IL1,
IL2,
IL3, and
IL4 decrease linearly.
3.3. Voltage Gain
Within the range 0 <
d < 0.5, assuming the parasitic parameters of all power devices are negligible, the capacitance value and the inductance value are sufficiently large. Where
Uin/
Uo denotes the input/output voltage. The voltages across capacitors C
1–C
4 are
UC1,
UC2,
UC3, and
UC4, respectively. When
S1S2 = 10, the inductor voltages across L
1–L
4 are
UL110,
UL210,
UL310,
UL410, respectively. When
S1S2 = 01, the inductor voltages across L
1–L
4 are
UL101,
UL201,
UL301,
UL401, respectively. When
S1S2 = 00, the inductor voltages across L
1–L
4 are
UL100,
UL200,
UL300,
UL400, respectively. When
S1S2 = 11, the inductor voltages across L
1–L
4 are
UL111,
UL211,
UL311,
UL411, respectively. By applying KVL to
Figure 4b–d, (1)–(3) can be obtained for
S1S2 = 10,
S1S2 = 01 and
S1S2 = 00, respectively.
According to
Figure 3a, by applying the volt-second balance principle to the inductors L
1–L
4, (4) can be obtained.
Substitute (1)–(3) into (4), and (5) can be obtained as follows:
Within the range of 0.5
d < 1, by applying KVL to
Figure 4a, (6) can be obtained for
S1S2 = 11.
According to
Figure 3b, by applying the volt-second balance principle to the inductors L
1–L
4, (7) can be obtained.
Substitute (1), (2) and (6) into (7) and (8) can be obtained as follows:
3.4. Voltage Stress
The voltage and current stresses are important criteria for selecting electronic devices, as the stresses will impact the durability and lifetime of the converter.
Ignore the forward voltage drop and the other parasitic parameters of the semiconductor devices. When
d is within 0–0.5, according to (2) and
Figure 4, the voltage stresses of all devices in the I-QB converter are expressed in
Table 1.
UD1–
UD6 denote the voltage stresses across diodes D
1–D
6, respectively.
US1 and
US2 represent the voltage stresses of switches S
1 and S
2, respectively.
As indicated in
Table 1, within the interval of 0 <
d < 0.5, S
2, D
5, and C
4 exhibit the highest voltage stress, equivalent to the output voltage. D
2, D
4, and C
3 achieve their maximum voltage stress at
d = 0.5, corresponding to 0.25 times, 0.75 times, and 0.5 times the output voltage, respectively. The voltage stress on the other components decreases as the duty cycle increases, remaining below 0.5 times the output voltage. Therefore, assuming a vehicle DC bus voltage of 300 V, to ensure sufficient margin and device reliability, C
3 and C
4 are selected as electrolytic capacitors with a withstand voltage of 900 V (achieved through the series–parallel connection of capacitors), while C
1 and C
2 are chosen as electrolytic capacitors with a withstand voltage of 450 V. All power devices are selected with a withstand voltage of 1200 V. However, in actual passenger FCVs, due to the relatively low voltage of the FC, high voltage stress typically does not occur in the low duty cycle range. Consequently, this paper should also focus on the results within the interval of 0.5 ≤
d < 1 during component selection.
When
d is within 0.5–1, according to (4) and
Figure 4, the voltage stresses of all devices in the I-QB converter are expressed in
Table 2.
From
Table 2, with the exception of D
5 and C
4, whose voltage stress is equivalent to the output voltage, the voltage stress on all other components is less than half of the output voltage. Assuming a vehicle bus voltage of 300 V, the aforementioned component selection remains reasonable and meets the requirements. Given that the DC/DC converter in passenger FCVs typically operates at a relatively high duty cycle, this paper will focus on the results within the interval of 0.5
d < 1.
3.5. Current Stress
In the range of 0 <
d < 0.5,
IL1–
IL4 denote the current flowing through
L1–
L4, and
Io/
Iin denotes the output/input current. When
S1S2 = 10, the average currents through capacitors C
1–C
4 are
IC110,
IC210,
IC310 and
IC410, respectively. When
S1S2 = 01, the average currents through capacitors C
1–C
4 are
IC101,
IC201,
IC301 and
IC401, respectively. When
S1S2 = 00, the average currents through capacitors C
1–C
4 are
IC100,
IC200,
IC300 and
IC400, respectively. When
S1S2 = 11, the average currents through capacitors C1–C4 are
IC111,
IC211,
IC311 and
IC411, respectively. By applying KCL to
Figure 4b–d, (9)–(11) can be obtained for
S1S2 = 10,
S1S2 = 01 and
S1S2 = 00, respectively.
According to
Figure 3a, by applying the ampere-second balance principle to the capacitors C
1–C
4, (12) can be obtained.
Substitute (9)–(11) into (12); then, (14) can be derived as follows:
Within the range of 0.5
d < 1, by applying KVL to
Figure 4a, (15) can be obtained for
S1S2 = 11.
According to
Figure 3b, by applying the ampere-second balance principle to the capacitors C
1–C
4, (16) can be obtained.
Substitute (9), (10) and (15) into (16); then, (18) can be derived as follows:
In the range of 0 <
d < 0.5, the current stresses of all devices can be calculated as shown in
Table 3. In this paper, the current stresses of all semiconductor devices are defined as the maximum average current in all operating modes.
As shown in
Table 3, the current stress of all components increases monotonically with the duty cycle, reaching its peak at a duty cycle of 0.5. At this point, the maximum current stress on the inductors, switches, and diodes is four times, eight times, and four times the output current, respectively. Considering that the current stress on components continues to increase within the interval 0.5
d < 1, it is not feasible to select components based on
Table 3.
In the range of 0.5
d < 1, the current stresses of all devices can be calculated as shown in
Table 4.
As indicated in
Table 4, the current stress on all components also increases monotonically with the duty cycle. Based on the power, load, and output voltage, at a duty cycle of 0.8, the maximum current stress on the inductors, switches, and diodes is 16.67 A, 16.67 A, and 35 A, respectively. To enhance the devices’ reliability and ensure a sufficient margin, this paper selects the inductors with a maximum operating current of 20 A. To minimize device losses and heat generation, SiC devices with low on-resistance (
Rds(on)) are chosen. Considering the devices’ current-carrying capacity and design margin, diodes with
IF = 88 A and switches with
ID = 65 A are selected. Based on the aforementioned voltage results, the selected diodes and switches are SCTWA50N120 and C4D30120D, respectively. It is evident that utilizing wide-bandgap devices to build DC/DC converters will become a trend.
3.6. Current Ripple
In the range of 0.5
d < 1, the input current ripple Δ
Iin can be presented as (19).
where
IL1a are
IL1b are the values of
IL1 at
t3 and
t2, respectively;
IL3a and
IL3b are the values of
IL3 at
t3 and
t2, respectively. When the I-QB converter is in the
S1S2 = 11 and operates in the
t2–
t3 stage (see
Figure 3b), (20) can be obtained.
When inductors
L1 and
L3 have the same inductance, the input current ripple Δ
Iin can be obtained by substituting (20) into (19), as shown in (21).
Similarly to the analysis of the input current ripple, the current ripples of inductors
L1,
L2,
L3 and
L4 can be expressed as (22).
In the range of 0 <
d < 0.5, using the similar method, (23) can be obtained. The current ripples of inductors
L1–
L4 are the same as that in the range of 0.5
d < 1 (Equation (22)).
3.7. Power Losses
To examine the efficiency of the prototype with the designed topology, the power losses of the I-QB converter are investigated. The power losses of the converter mainly include the switching, conduction, and driving losses of switches, the switching and conduction losses of diodes, the ESR losses of capacitors, and the iron and copper losses of inductors, which are denoted by PS_switch, PS_cond, PS_drive, PD_switch, PD_cond, PC, PFe, and PCu, respectively.
To simplify the calculation, the voltage/current ripples across the inductors/capacitors are ignored. Moreover, it is assumed that there are no differences between the identical parasitic parameters of the same components.
The losses of the switches
PS can be calculated in (24) and (25).
where
TS_on represents the turn-on delay time of
S1 and
S2;
TS_off represents the turn-off delay-time of
S1 and
S2;
US_drive represents the drive voltages of
S1 and
S2;
QS_gate represents the gate charges of
S1 and
S2;
rS represents the MOSFET’s (
S1–
S2) on-resistances; and
fs denotes the switching frequency. The losses of diodes
PD can be derived using (26) and (27).
where
QD is the reverse recovery charge of diodes
D1–
D6, and
VF is the diodes’ (
D1–
D6) threshold voltage. The losses of capacitors
PC can be calculated in (28) and (29).
where
RESR_C is the equivalent series resistances of capacitors
C1–
C4. The losses of the inductors
PL can be calculated in (30) and (31).
where
rL is the ESR of inductors
L1–L4.
le is the length of the magnetic path and
Ae is the cross-section of the core.
a,
b and
c are the empirical parameters fitted according to the magnetic core data manual, and
B is half of the AC flux swing.
Thus, the efficiency of the I-QB converter can be calculated in (32).
4. Comparisons
To prove the advantages of the I-QB converter in FCV application, a comparison with other existing DC/DC converters is performed in terms of voltage gain, the input current ripple, device stress, device number, and common ground or not, etc. The comparisons are summarized in
Table 5. From
Table 5, only Refs. [
4,
19,
22,
23,
24,
25] and the I-QB converter meet the requirements of continuous input current and common ground attribute. Moreover, the converter in Ref. [
25] and the I-QB converter can reduce the input current ripple.
Figure 5 compares the voltage gain (
M represents voltage gain) of Refs. [
4,
19,
22,
23,
24,
25] and the I-QB converter. It can be seen from
Figure 5 that the slope of voltage gain in Refs. [
22,
23,
24] is large. Although high voltage gain can be obtained in theory, the control difficulty increases. When duty cycle
d > 0.8, the voltage gain of Refs. [
19,
25] is lower than ten, and it is necessary to continue increasing the duty cycle to obtain the voltage gain, but with the increase of the voltage gain, the parasitic power losses will decrease the efficiency so that the theoretical high voltage gain cannot be obtained in practice. Therefore, only the I-QB converter and Ref. [
4] can obtain more than 50 times voltage gains in practice. Meanwhile, it was observed that the duty cycle ranges in Refs. [
22,
23,
24] are relatively narrow (0.5–0.75 for Ref. [
22], and 0–0.5 for Refs. [
23,
24]), posing challenges for converter’s controller design. When input voltage varies over a wide range, an inadequately designed controller may cause significant overshoot in the output voltage.
Figure 6 shows the input current ripple rate curves of Refs. [
4,
19,
22,
23,
24,
25] and the I-QB converter. As shown in
Figure 6, when
d is in the range of 0.5–1 (under a high voltage gain), the input current ripple rate of the I-QB converter is the smallest (see
Figure 6b). When the duty cycle
d is around 0.6, the maximum input current ripple rate of the I-QB converter is about 0.0012
R/
L/
fs, thereby well suppressing the input current ripple, reducing the adverse effects on the FC lifespan.
Figure 7 shows the voltage stress versus duty cycle curve for the I-QB converter. As shown in
Figure 7, only diode D
5 and capacitor C
4 experienced voltage stresses equal to the output voltage, while the voltage stresses on all other components remained below half the output voltage value. This ensures that the majority of devices in the I-QB converter operate under low voltage stress conditions. Under conditions where components experience low voltage stress, even with a slightly higher number of components, the power density of the converter may not decrease significantly.
6. Experiments
Wide-bandgap devices such as SiC and GaN offer high breakdown voltage, fast switching speed, and low losses, making them well-suited for achieving high-frequency and high-efficiency converter operation. To validate the performance of the I-QB converter, a scaled-down prototype based on SiC devices was developed and tested, demonstrating its steady-state and dynamic characteristics.
6.1. Parameters Selection
To ensure that the I-QB converter operates in the CCM condition, the values of inductors
L1,
L2,
L3, and
L4 should be designed to satisfy (46)–(48).
where
L is the inductance,
dt =
d/
fs, and
dIL = Δ
IL. According to
Table 3 and
Table 4 and (49), the calculation of all capacitors in the I-QB converter can be obtained in (50) and (51).
where
C is the capacitance,
dt =
d/
fs, and
dUC = Δ
UC. The voltage fluctuations in capacitors
C1–
C4 are Δ
UC1, Δ
UC2, Δ
UC3, and Δ
UC4, respectively.
Incorporating the parameters in
Table 1 and
Table 3 and Equations (47), (48), (50) and (51), it can be obtained that the critical values of inductors in the five times voltage step-up state are L
1 = 90.2 μH, L
2 = 263.5 μH, L
3 = 63.9 μH, and L
4 = 186.9 μH. When the ripples of voltage are 0.02 V, the values of capacitors are C
1 = 167.8 μF, C
2 = 236.5 μF, C
3 = 236.5 μF, and C
4 = 138.3 μF. Incorporating the parameters in
Table 2 and
Table 4 and Equations (47), (48), (50) and (51), it can be obtained that the critical values of inductors in the ten times voltage step-up state are L
1 = 24.8 μH, L
2 = 124.3 μH, L
3 = 24.8 μH, and L
4 = 124.3 μH. When the ripples of voltage are 0.02 V, the values of capacitors are C
1 = 412.5 μF, C
2 = 412.5 μF, C
3 = 333.5 μF, and C
4 = 184.5 μF. To ensure that the I-QB converter consistently operates in CCM, and considering that the sum of the currents through L
1 and L
3 equals the input current, the following values are selected to further reduce the input current ripple while maintaining a sufficient margin: L
1–L
4 = 300 μH, C
1–C
2 = 680 μF, C
3 = 390μF, and C
4 = 220μF. Based on the analysis in
Table 1,
Table 2,
Table 3 and
Table 4 and
Section 3.4 and
Section 3.5, the switches and diodes are selected as SCTWA50N120 and C4D30120D, respectively. The parameters of the experimental platform are listed in
Table 6, the SiC-based prototype of the I-QB converter is shown in
Figure 11a, and the test platform is shown in
Figure 11b. The controller chip utilizes TI’s TMS320F28335, and the voltage sampling circuit adopts the Hall sensor. The driving circuit adopts ADuM1200 and IXDD609 to realize galvanic isolation and high-frequency drive, respectively.
6.2. Steady-State Performance
When the
Uin is 60 V and the reference voltage
Uref of the closed-loop system is 300 V, the converter works in a low voltage conversion ratio (ie.
d < 0.5 and
M = 5). The results are recorded in
Figure 12. From
Figure 12, it can be seen that the switching frequency
fs is 100 kHz and the duty cycle
d is 0.43 (due to the parasitic parameters, it is slightly greater than 0.415). The inductor average currents are
IL1 = 1.4 A,
IL2 = 0.9 A,
IL3 = 2.0 A,
IL4 = 1.2 A, and
Iin = 3.4 A, respectively, which are largely in agreement with the theoretical predictions. The
Uo of the I-QB converter stabilizes at the
Uref of 300 V. The voltage stresses of power switches S
1–S
2, diodes D
1–D
6, and capacitors C
1–C
4 are shown in
Figure 12a–g, which are basically consistent with the theoretical prediction and verify the correctness of the topology analysis. As shown in
Figure 12f,g, the I-QB converter operates in an interleaved mode, and the current ripples of inductor
L1 and
L3 are compensating each other, resulting in a low ripple of the input current
Iin, which is only 0.3 A.
When the
Uin is 30 V and the
Uref of the closed-loop system is 300 V, the converter works in a high voltage conversion ratio (ie.
d > 0.5 and
M = 10). The waveforms are recorded in
Figure 13 where the
fs is 100 kHz and the
d is 0.58 (due to the parasitic parameters, it is slightly greater than 0.553). The inductor average currents are
IL1 = 3.5 A,
IL2 = 1.5 A,
IL3 = 3.5 A,
IL4 = 1.5 A, and
Iin = 7 A, respectively, which verify the theoretical analysis. The
Uo of the I-QB converter stabilizes at the
Uref of 300 V. The voltage stresses of switches S
1–S
2, diodes D
1–D
6, and capacitors C
1–C
4 are shown in
Figure 13a–g, which are largely in agreement with the theoretical predictions and verify the correctness of the topology analysis. As shown in
Figure 13f,g, the I-QB converter operates in an interleaved mode, and the current ripples of inductor
L1 and
L3 are compensated by each other, resulting in no significant input current ripple being observed.
6.3. Dynamic Performance Analysis
To verify the dynamic performance of the I-QB converter and simulate extreme FC voltage drop conditions, experiments with the I-QB converter under the input voltage step change are conducted. When the
Uref is set as 300 V and the rated power
Po is 200 W, we change the
Uin between 50 V and 80 V. The waveforms are recorded in
Figure 14. From
Figure 14, when the
Uin step changes in a wide range, the overshoot of
Uo is less than 50 V, and the voltage can stabilize within 200 ms.
The settling time is influenced by the following factors. (1) Control bandwidth limitation: From
Figure 10, the system’s control bandwidth is approximately 60 Hz. Due to the inverse relationship between settling time and control bandwidth, the inherent response speed is restricted. Although a higher bandwidth could shorten the settling time, it might compromise the system’s stability. This conflicts with the requirement for the converter to operate over a wide input voltage range, as changing the operating point already causes a reduction in the system’s stability margin. Moreover, non-ideal factors such as LC filtering, sampling, and PWM delays further prolong the settling time. (2) Passive component sizing: As mentioned in
Section 6.1, the values of the inductors and capacitors are larger than their theoretical critical values. This is primarily to ensure that the converter operates in CCM and to minimize input current ripple. While these larger component values effectively suppress ripple, they inherently introduce larger time constants, further limiting the bandwidth, consequently leading to a longer settling time. (3) Experimental setup constraints: To ensure stable operation under all working conditions and maintain the anti-interference ability, the bandwidth cannot be designed too high, which objectively limits the dynamic response speed.
Since FCs primarily deliver average power while instantaneous power is supplied and recovered by the power battery (as shown in
Figure 1), a settling time of 200 ms is acceptable for the DC/DC converter, as any resulting bus voltage overshoot can be offset by the power battery. Moreover, the experimental conditions for the input voltage step test are more stringent than the actual output characteristics of an FC. When the output voltage of an FC decreases slowly as the input current increases, the converter is expected to achieve an even better dynamic performance.
To verify the dynamic performance of the I-QB converter under sudden steps in vehicle driving conditions (load steps), we set the
Po to 200 W and the output resistor step change between 450 Ω and 900 Ω. The waveforms are recorded in
Figure 15. From
Figure 15, it can be seen that when the load steps are between 100% and 50%, the
Uo has no obvious fluctuation. Thus, it is verified that the I-QB converter has a good dynamic response.
6.4. Efficiency Testing
The efficiency curves of this prototype are experimentally derived and shown in
Figure 16. The
Po is 100 W, 200 W and 300 W, the
Uin increases from 30 V to 80 V, the
Uref is set to 300 V, and the
fs is 100 kHz or 200 kHz.
Figure 16 shows that the theoretical and experimental results have good consistency, with the theoretical efficiency values slightly higher than the measured efficiency values. The maximum measured efficiency reaches 96.2%, occurring when the
Uin is 80 V and the
Po is 100 W. At the rated power of 200 W, the maximum measured efficiency is 94.2%. At a power of 300 W, the maximum measured efficiency further decreased to 91.9%. The efficiency decreases when the
Uin drops at a constant output power, as the resulting increase in the
Iin leads to higher losses. Similarly, with the
Uin fixed, raising
Po raises the
Iin and consequently reduces efficiency. The peak efficiency of 92.1% occurs at
Po = 200 W and
fs = 200 kHz. For a constant
Po, the efficiency declines with a rising
fs due to greater switching losses from more frequent switching events. The experimental results validate that the overall efficiency of the I-QB converter is relatively high, and the energy loss of FCV powertrains can be potentially reduced by employing the I-QB converter.
It is worth noting that efficiency is correlated with factors such as the switching frequency, rated power, stress, component count, and device materials, etc. The 94.2% efficiency achieved in this SiC-based prototype cannot be regarded as extremely high efficiency. However, considering the component count, existing experimental conditions, PCB fabrication constraints, and other design requirements that the converter must balance, this efficiency level is satisfactory. For future researchers aiming to further improve efficiency, measures such as soft switching technology, synchronous rectification technology, optimized PCB layout, and EMI suppression could be considered. However, these aspects are not the primary focus of this study, as this prototype is intended solely to validate the feasibility and effectiveness of the I-QB converter.
6.5. Loss Analysis
Based on the parameters in
Table 6, with
VF = 1.4 V,
RESR_C = 0.02 Ω,
rL = 0.01 Ω,
rS = 0.021 Ω, the calculated loss distributions under
Uin = 30 V/60 V,
Uo = 200 V,
fs = 100 kHz and
Po = 200 W are shown in
Figure 17. The results in
Figure 17 indicate that the switching losses of switches and diode losses account for a substantial portion of the total losses. The proportion of switching loss increases with the increasing device stress. The conduction loss of the diodes increases with higher duty cycles, because the
VF is almost constant in a wide current range, and the conduction loss is determined by the diode’s current.
To further demonstrate the consistency between theory and experiment, this paper directly compares the theoretical and experimental values of the voltage gain, input current ripple, and efficiency, as shown in
Table 7. From
Table 7, the theoretical and experimental values exhibit good consistency. The errors are all within an acceptable range. Several reasons explain the errors between theoretical and experimental values. (1) The effects of parasitic parameters are neglected when calculating the voltage gain and input current ripple. (2) Although parasitic parameters are considered in the loss analysis, only average values are used, and the impact of devices’ temperature rise is not included in the calculations. (3) It is challenging to incorporate the effects of EMI on the converter during calculations. (4) Inevitable measurement noise and instrument errors affect the experimental results.
6.6. Discussion
It should be further clarified that the rated power of the experimental prototype in this paper is 200 W, which is relatively low compared to the kilowatt-level power (e.g., 50 kW) required for practical passenger FCVs powertrains. This prototype is intentionally designed as a scaled-down concept validation, aimed to verify the operating principles and control strategy of the I-QB converter under safe and cost-controllable conditions. The primary contribution of this work lies in demonstrating its functionality and feasibility, rather than immediately achieving full-power operation.
The proposed topologies can be adapted to higher power levels through two main engineering approaches. First, by employing SiC power modules with higher rated power (e.g., Cree EDB003M06TM3, Cree CAB500M17HM3) and optimizing magnetic components (e.g., using nanocrystalline ring magnetic core), along with corresponding thermal management upgrades—such as replacing the passive air cooling system with a forced liquid cooling system that meets automotive industry standards. Second, the modular attribute of these topologies supports power scaling by interleaving or directly paralleling multiple converter units. These strategies not only increase the total power capacity but also offer additional advantages such as a reduced input current ripple and enhanced system fault tolerance. Although these scaling pathways are conceptually sound and based on mature industrial practices, their experimental validation at kilowatt power levels remains a key direction for future work.