Shavelis, R.; Ozols, K.; Ebli, M.; Ohms, C.
Optimization of Gate Current Profiles for SiC Power MOSFETs with Respect to Switching Loss, Overshoot, and Slew Rate. Electronics 2026, 15, 2387.
https://doi.org/10.3390/electronics15112387
AMA Style
Shavelis R, Ozols K, Ebli M, Ohms C.
Optimization of Gate Current Profiles for SiC Power MOSFETs with Respect to Switching Loss, Overshoot, and Slew Rate. Electronics. 2026; 15(11):2387.
https://doi.org/10.3390/electronics15112387
Chicago/Turabian Style
Shavelis, Rolands, Kaspars Ozols, Michael Ebli, and Christian Ohms.
2026. "Optimization of Gate Current Profiles for SiC Power MOSFETs with Respect to Switching Loss, Overshoot, and Slew Rate" Electronics 15, no. 11: 2387.
https://doi.org/10.3390/electronics15112387
APA Style
Shavelis, R., Ozols, K., Ebli, M., & Ohms, C.
(2026). Optimization of Gate Current Profiles for SiC Power MOSFETs with Respect to Switching Loss, Overshoot, and Slew Rate. Electronics, 15(11), 2387.
https://doi.org/10.3390/electronics15112387