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Karrame K, Chang C, Nallatamby J-C, Colas M, Sommet R. Joint Use of Thermal Characterization and Simulation of AlGaN/GaN High-Electron Mobility Transistors in Transient and Steady State Regimes to Estimate the Hotspot Temperature. Electronics. 2025; 14(5):935. https://doi.org/10.3390/electronics14050935

Karrame, Khalil, Christophe Chang, Jean-Christophe Nallatamby, Maggy Colas, and Raphael Sommet. 2025. "Joint Use of Thermal Characterization and Simulation of AlGaN/GaN High-Electron Mobility Transistors in Transient and Steady State Regimes to Estimate the Hotspot Temperature" Electronics 14, no. 5: 935. https://doi.org/10.3390/electronics14050935

Karrame, K., Chang, C., Nallatamby, J.-C., Colas, M., & Sommet, R. (2025). Joint Use of Thermal Characterization and Simulation of AlGaN/GaN High-Electron Mobility Transistors in Transient and Steady State Regimes to Estimate the Hotspot Temperature. Electronics, 14(5), 935. https://doi.org/10.3390/electronics14050935