Liu, C.; Guo, G.; Shi, H.; Zhang, Z.; Li, F.; Han, J.; Zhang, Y.
Equivalence Study of Single-Event Effects in Silicon Carbon Metal-Oxide Semiconductor Field-Effect Transistors by Protons and Heavy Ions. Electronics 2025, 14, 1022.
https://doi.org/10.3390/electronics14051022
AMA Style
Liu C, Guo G, Shi H, Zhang Z, Li F, Han J, Zhang Y.
Equivalence Study of Single-Event Effects in Silicon Carbon Metal-Oxide Semiconductor Field-Effect Transistors by Protons and Heavy Ions. Electronics. 2025; 14(5):1022.
https://doi.org/10.3390/electronics14051022
Chicago/Turabian Style
Liu, Cuicui, Gang Guo, Huilin Shi, Zheng Zhang, Futang Li, Jinhua Han, and Yanwen Zhang.
2025. "Equivalence Study of Single-Event Effects in Silicon Carbon Metal-Oxide Semiconductor Field-Effect Transistors by Protons and Heavy Ions" Electronics 14, no. 5: 1022.
https://doi.org/10.3390/electronics14051022
APA Style
Liu, C., Guo, G., Shi, H., Zhang, Z., Li, F., Han, J., & Zhang, Y.
(2025). Equivalence Study of Single-Event Effects in Silicon Carbon Metal-Oxide Semiconductor Field-Effect Transistors by Protons and Heavy Ions. Electronics, 14(5), 1022.
https://doi.org/10.3390/electronics14051022
