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Article
Peer-Review Record

Realization of Modified Electrical Equivalent of Memristor-Based Pavlov’s Associative Learning to Avoid Training Fallacies

Electronics 2025, 14(3), 606; https://doi.org/10.3390/electronics14030606
by Ankit Mehta 1,*, Arash Ahmadi 2 and Majid Ahmadi 1
Reviewer 1: Anonymous
Reviewer 2: Anonymous
Reviewer 3:
Electronics 2025, 14(3), 606; https://doi.org/10.3390/electronics14030606
Submission received: 16 December 2024 / Revised: 20 January 2025 / Accepted: 27 January 2025 / Published: 4 February 2025
(This article belongs to the Special Issue Analog Circuits and Analog Computing)

Round 1

Reviewer 1 Report

Comments and Suggestions for Authors

This paper discusses the design of a circuit based on a memory resistor (memristor) to simulate the classical conditioned reflex in Pavlov's experiment. The research content of the article is somewhat innovative, but there are some shortcomings for further improvement:

1. Part of the article is formatted incorrectly, please review it carefully to meet the publication requirements.

2. Is it possible to provide a more detailed explanation of the physical mechanism of the “training fallacy”?

3. Could more experimental data be added, especially hardware tests using real amnesia to verify the practical feasibility of the circuit design?

4.Could more theoretical justifications for model selection and parameter setting be provided, and the potential effects of parameter variations on circuit performance be discussed?

5. The theoretical analysis of the improved circuit is rather brief, especially in terms of the circuit details of the functional implementation of the CMOS circuit (e.g., AND and OR gate logic), and does not adequately explain its operation and innovations. Is it possible to explain in more detail the specific functionality of each part of the circuit design and its innovativeness, and to make an in-depth comparison with the classical design?

In conclusion, the article provides some valuable results in terms of technical implementation and experimental verification, but there is still room for improvement.

Author Response

Dear Reviewer,

We have answered in the attached file 

Thanks

 

Ankit

Author Response File: Author Response.docx

Reviewer 2 Report

Comments and Suggestions for Authors

The manuscript by Mehta et al presents interesting results. The manuscript is clear and well written. The reviewer has the following comments to improve the manuscript.

 

-Define acronyms before use it, check abstract.

- In order to make the manuscript clearer and well undertansded, fig 2 should include a brief explanation of its operation, even if it is a well-known circuit. More important, explain what is the role of the memristor in this circuit.

- The authors mention that Table 1 outlines the key parameters of the modeled memristors. However, the table 1 includes only the aspect ratios of the memristors.

- The authors choose a V+ bias of 5V and a V- bias of - 1V. Why the authors choose these values?

- The reviewer suggest to include a block diagram of the circuit presented in figure 7 to explain the operation of the circuit. Also, include an explanation of the role in operation of the memristor.

- Table 2 should include more parameters. 

- Figures 16 and 17 present a proof of working of the circuit. However, the reviewer suggest include a figure merged with the measurements in order to compare the input and output signals. 

- The authors must include an explanation of the curves shown in figure 13.

Author Response

Dear Reviewer,

We have answered in the doc file attached 

Thanks

Ankit

Author Response File: Author Response.docx

Reviewer 3 Report

Comments and Suggestions for Authors

1. The conversation shifts from artificial neural networks to memristors and associative memory. Including a more straightforward explanation to connect these topics would be beneficial, facilitating a more seamless transition.

2. Discussing the issues with the classical circuit (Section 2.4) is comprehensive. However, it could benefit from a summary of the implications of these limitations in more straightforward language to enhance accessibility.

3. The parameters of the memristor model are thoroughly documented; however, providing additional insight into the rationale behind selecting this particular model over alternative options would enrich the discussion.

4. The simulation parameters outlined in Section 2.3 provide valuable insights. Nonetheless, a more detailed discussion on the importance of specific values, like resistance ranges or threshold voltages, would enhance understanding of their influence on circuit behavior.

5. The conclusion succinctly addresses the utilization of commercially available integrated circuits for experimental validation. Elaborating on the degree to which the experimental results correspond with the simulations would offer more compelling support for the circuit's efficacy.

Author Response

Dear Reviewer,

We have attached in the doc file attached.

Thanks

Ankit

Author Response File: Author Response.docx

Round 2

Reviewer 2 Report

Comments and Suggestions for Authors

The authors followed the suggestions made by the reviewer. 

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