Huo, Y.; Li, J.; Weng, Z.; Ding, Y.; Chen, L.; Qi, J.; Qu, Y.; Zhao, Y.
Dynamic Imprint and Recovery Mechanisms in Hf0.2Zr0.8O2 Anti-Ferroelectric Capacitors with FORC Characterization. Electronics 2025, 14, 4593.
https://doi.org/10.3390/electronics14234593
AMA Style
Huo Y, Li J, Weng Z, Ding Y, Chen L, Qi J, Qu Y, Zhao Y.
Dynamic Imprint and Recovery Mechanisms in Hf0.2Zr0.8O2 Anti-Ferroelectric Capacitors with FORC Characterization. Electronics. 2025; 14(23):4593.
https://doi.org/10.3390/electronics14234593
Chicago/Turabian Style
Huo, Yuetong, Jianguo Li, Zeping Weng, Yaru Ding, Lijian Chen, Jiabin Qi, Yiming Qu, and Yi Zhao.
2025. "Dynamic Imprint and Recovery Mechanisms in Hf0.2Zr0.8O2 Anti-Ferroelectric Capacitors with FORC Characterization" Electronics 14, no. 23: 4593.
https://doi.org/10.3390/electronics14234593
APA Style
Huo, Y., Li, J., Weng, Z., Ding, Y., Chen, L., Qi, J., Qu, Y., & Zhao, Y.
(2025). Dynamic Imprint and Recovery Mechanisms in Hf0.2Zr0.8O2 Anti-Ferroelectric Capacitors with FORC Characterization. Electronics, 14(23), 4593.
https://doi.org/10.3390/electronics14234593
