Article Versions Notes

Huo Y, Li J, Weng Z, Ding Y, Chen L, Qi J, Qu Y, Zhao Y. Dynamic Imprint and Recovery Mechanisms in Hf_0.2Zr_0.8O₂ Anti-Ferroelectric Capacitors with FORC Characterization. Electronics. 2025; 14(23):4593. https://doi.org/10.3390/electronics14234593

Huo, Yuetong, Jianguo Li, Zeping Weng, Yaru Ding, Lijian Chen, Jiabin Qi, Yiming Qu, and Yi Zhao. 2025. "Dynamic Imprint and Recovery Mechanisms in Hf_0.2Zr_0.8O₂ Anti-Ferroelectric Capacitors with FORC Characterization" Electronics 14, no. 23: 4593. https://doi.org/10.3390/electronics14234593

Huo, Y., Li, J., Weng, Z., Ding, Y., Chen, L., Qi, J., Qu, Y., & Zhao, Y. (2025). Dynamic Imprint and Recovery Mechanisms in Hf_0.2Zr_0.8O₂ Anti-Ferroelectric Capacitors with FORC Characterization. Electronics, 14(23), 4593. https://doi.org/10.3390/electronics14234593