Radiation Effects of Advanced Electronic Devices and Circuits, 2nd Edition

1. Introduction

In recent years, the expanding use of advanced electronics in harsh radiation environments has heightened reliability demands, prompting extensive research into radiation-effect modeling and advanced radiation hardening design methodologies that serve these applications [1,2,3,4,5,6]. The relentless scaling of integrated circuit (IC) fabrication processes and the growing complexity of electronic devices have further heightened their susceptibility to radiation effects, presenting clear yet compelling challenges that will continue to drive future research [7,8,9,10,11,12,13,14,15,16]. The second edition of “Radiation Effects of Advanced Electronic Devices and Circuits” features thirteen high-quality contributions that showcase emerging applications and address recent breakthroughs (Contributions 1–13). These contributions collectively advance radiation hardening and reliability assessment across critical domains. Novel hardening strategies enhance fault tolerance in aerospace computing systems, moving beyond conventional monolithic approaches through hierarchical techniques. Significant progress is reported in understanding fundamental radiation damage mechanisms within wide-bandgap semiconductor platforms, covering complex interactions involving Total Ionizing Dose (TID), displacement damage, and Single-Event Effects (SEEs). Research advances the characterization of synergistic effects where multiple degradation mechanisms concurrently impact device lifetime and performance. Pioneering methodologies are established for mission-specific reliability validation, enabling more accurate prediction of failure pathways under representative radiation environments. Critical work addresses electromagnetic compatibility challenges through innovative shielding design principles and predictive modeling techniques. Studies also decode transient radiation damage evolution in energy conversion components and establish operational safety frameworks for power electronics in extreme environments. This Special Issue significantly strengthens the foundational knowledge for developing radiation-tolerant electronics, providing essential insights into physics mechanisms while delivering practical hardening solutions and assessment frameworks for increasingly demanding aerospace and terrestrial applications.

2. Highlighting Key Contributions

The thirteen articles comprising the second edition of “Radiation Effects of Advanced Electronic Devices and Circuits” synthesize cutting-edge developments in radiation effects, showcasing the latest research advances across critical semiconductor technologies. These encompass CNN accelerators for aerospace computing, Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), high-barrier beta-Gallium Oxide (β-Ga₂O₃) Schottky Barrier Diodes (SBDs), silicon MOSFETs, and Indium Phosphide Heterojunction Bipolar Transistors (InP HBTs), as detailed in Contributions 1–13.

Integrating machine learning into space missions such as remote sensing imaging and space debris management has become a rising trend. Employing Convolutional Neural Network (CNN)-based edge computing in remote sensing tasks enables real-time processing of captured images, lowers costs, and extends mission duration and battery life. However, deploying CNN accelerators in aerospace computing faces severe threats from Single Event Upset (SEU)-induced weight bit flip errors. Cai, Y. et al. (Contribution 1) merges weight-limiting hardening techniques with a Triple Modular Redundancy (TMR) architecture. The SEU vulnerable layers are observed using the fault injection method. It develops hierarchical hardening strategies that achieve impressive gains in fault tolerance over conventional monolithic approaches.

The unique properties of wide-bandgap semiconductors underlie their diverse applications in fields such as power electronics, RF electronics, and optoelectronics. As a strong contender for fourth-generation semiconductors, research on beta-Gallium Oxide (β-Ga₂O₃) is shifting from fundamental material properties to device applications. Fu, W., et al. (Contribution 2) decouples the contribution of temperature to TID effects in β-Ga₂O₃ SBDs, uncovering high-temperature annealing effects while simulating complex real-world operational environments. Zhao, P. et al. (Contribution 3) comprehensively evaluates the TID and displacement damage effects induced by X-ray and 1 MeV reactor neutron irradiation on β-Ga₂O₃ SBDs, clarifying post-irradiation performance and physical damage mechanisms. In addition, GaN HEMTs, as cornerstone devices of third-generation semiconductors, play vital roles in radiation-tolerant electronics. Huang, H. et al. (Contribution 4) deciphers the cascading failure pathways in GaN HEMTs by proton and heavy-ion irradiation and quantitatively maps the degradation hierarchy from interface trap generation and 2D electron gas depletion to drain leakage runaway. Moreover, InP semiconductors are widely used in aerospace applications due to their superior material properties, yet their susceptibility to space radiation requires critical attention. Zhao, X., et al. (Contribution 5) establishes a degradation model for InP HBTs during proton irradiation and annealing processes, providing deep insights into proton-induced damage mechanisms. This study pioneers a comprehensive research framework integrating both irradiation and annealing effects.

Expanded use of advanced integrated circuits in aerospace systems elevates the significance of MOSFET reliability analysis. He, Y., et al. (Contribution 6) systematically investigates the synergistic mechanisms of TID and hot carrier injection on NMOS device performance degradation, revealing their combined influence in lifetime assessment and filling a critical gap in quantitative analysis of combined effects. As MOSFETs constitute fundamental building blocks of memory cells, their radiation susceptibility directly impacts SRAM reliability. Therefore, Zheng, S. et al. (Contribution 7) examines temperature-dependent SEU cross-section variations in 28 nm SRAM, pioneering atmospheric neutron irradiation studies for modern-process SRAM. This work addresses a research void while elucidating the physical mechanisms underlying temperature-dependent SEU cross-section changes.

With the trend of modern electronic devices toward high-speed operation, high integration, and the wide adoption of wireless communication technologies, electromagnetic interference (EMI) and electromagnetic compatibility (EMC) issues have become increasingly critical. Consequently, efficient electromagnetic shielding technology has emerged as a key solution to ensure reliable operation of electronic equipment. Kwon, J.H., et al. (Contribution 8) proposed a structure integrating a dual-layer metal plate shell with a composite. Through modeling and simulation, the authors revealed that aperture spacing is the key to enhancing shielding effectiveness, not the thickness of the absorber itself. This provides the insight that offsetting apertures on the inner and outer shielding plates can significantly improve the overall shielding performance, offering an effective design guideline for shielding facilities. Additionally, Park, H.H., et al. (Contribution 9) experimentally analyzed the impact of the air gap between magnetic sheets and the microstrip test board on near-field magnetic shielding effectiveness (NSE). It revealed the dual effects of the air gap on shielding effectiveness and proposed a comprehensive physical explanation for these dual effects. This finding provides critical engineering guidance. Moreover, Park, H.H., et al. (Contribution 10) proposed a method to predict its NSE by measuring the relative permeability of ferrite sheets. Based on the measured NSE and relative permeability data, eight regression models were developed, which significantly improved both prediction efficiency and accuracy.

Li, S., et al. (Contribution 11) investigates damage mechanisms in silicon solar cells under nanosecond pulsed-laser irradiation, establishing dynamic damage evolution models. This study bridges a critical gap in the characterization of laser-induced transient pulse signatures and establishes a novel analytical framework for elucidating damage progression pathways.

Single-Photon Avalanche Diodes (SPADs) have gained prominence in quantum communications and LiDAR systems owing to their single-photon sensitivity, yet radiation-induced degradation poses critical reliability challenges for space applications. Xun, M., et al. (Contribution 12) pioneers a mission-specific approach by replicating the 4-year Geosynchronous Transfer Orbit (GTO) proton environment with tailored shielding configurations. Through a comparative analysis of gamma and proton damage mechanisms under equivalent total doses, this study conducted an in-depth examination by closely correlating macroscopic performance degradation with microscopic physical mechanisms.

Amid rapid deployment of ultra-high-voltage flexible DC transmission infrastructure, growing demand exists for high-altitude applications of flexible DC technology. Radiation tolerance of DC converters (core system components) presents critical engineering challenges. Yang, L., et al. (Contribution 13) pioneers a ground-based neutron radiation test platform simulating high-altitude conditions to quantify failure rate evolution in three critical power devices. By integrating operational radiation data to develop failure prediction models, this study establishes definitive radiation-safe operating boundaries for power devices for the first time, delivering solutions for engineering design and reliability validation.

In conclusion, driven by the accelerating demand for radiation-hardened high-performance electronics in space and nuclear domains, research on radiation effects in advanced devices and integrated circuits has expanded at an unprecedented pace. A comprehensive grasp of the underlying physics and the continuous invention of mitigation strategies are now imperative. The contributions gathered in this Special Issue illustrate the remarkable breadth of current efforts, spanning fundamental nuclear and solid-state physics, system-level modeling, and novel hardening architectures. Looking forward, the third edition of “Radiation Effects of Advanced Electronic Devices and Circuits” will continue to concentrate on next-generation nodes and beyond-CMOS devices such as gate-all-around nanosheets and two-dimensional-material FETs. Attention will also shift to heterogeneous three-dimensional-stacked and chiplet-in-package systems where single-event charge sharing effect and system-level fault propagation dominate. Equally critical is the assurance of AI-enabled space electronics through radiation-aware training and inference frameworks, on-orbit self-healing neuromorphic accelerators, and formal verification of autonomous controllers for safety-critical missions.