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Article

Study of the Effect of Magnetic Fields on the Secondary Electron Model

1
Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
2
University of Chinese Academy of Sciences, Beijing 100049, China
*
Author to whom correspondence should be addressed.
Electronics 2025, 14(12), 2446; https://doi.org/10.3390/electronics14122446
Submission received: 24 April 2025 / Revised: 7 June 2025 / Accepted: 10 June 2025 / Published: 16 June 2025

Abstract

Secondary electron emission (SEE), a common physical phenomenon, exhibits both prominent applications in various fields and concomitant adverse impacts. Secondary electron yield (SEY) is a parameter for characterizing SEE, which determines the effect of the application and is very sensitive to the surroundings, particularly the magnetic field. Previous studies mainly focused on the influence of the magnetic field on secondary electron trajectories rather than the SEY itself. In this work, a specialized experimental platform was established to measure SEY, through which the influences caused by primary electrons and secondary electron trajectories were eliminated. The research findings demonstrate that as the magnetic field intensity increases, the SEY decreases rapidly and then gradually stabilizes. Meanwhile, a self-developed Monte Carlo simulation program was utilized to verify the above results, and it was concluded that the influence of magnetic field on SEY stems from the increased number of collisions of secondary electrons within the material. These results possess significant guiding significance and reference value for certain application scenarios where SEY suppression is required as well as for the design of multiplier devices aiming to enhance the output by utilizing magnetic fields.
Keywords: secondary electron emission; magnetic field; Monte Carlo simulation; secondary electron yield secondary electron emission; magnetic field; Monte Carlo simulation; secondary electron yield

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MDPI and ACS Style

Deng, C.; Huang, J.; Zheng, L.; Han, L.; Niu, G.; Wang, P. Study of the Effect of Magnetic Fields on the Secondary Electron Model. Electronics 2025, 14, 2446. https://doi.org/10.3390/electronics14122446

AMA Style

Deng C, Huang J, Zheng L, Han L, Niu G, Wang P. Study of the Effect of Magnetic Fields on the Secondary Electron Model. Electronics. 2025; 14(12):2446. https://doi.org/10.3390/electronics14122446

Chicago/Turabian Style

Deng, Chenhui, Jingyu Huang, Libing Zheng, Li Han, Geng Niu, and Pengfei Wang. 2025. "Study of the Effect of Magnetic Fields on the Secondary Electron Model" Electronics 14, no. 12: 2446. https://doi.org/10.3390/electronics14122446

APA Style

Deng, C., Huang, J., Zheng, L., Han, L., Niu, G., & Wang, P. (2025). Study of the Effect of Magnetic Fields on the Secondary Electron Model. Electronics, 14(12), 2446. https://doi.org/10.3390/electronics14122446

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