Article Versions Notes

Sun Y, Meng F, Gong J, Gao Y, Chen R, Zhao L, Zeng D, Fu T, He W, Wang Y. Optimization of Bifurcated Switching by Enhanced Synthetic Antiferromagnetic Layer. Electronics. 2024; 13(23):4771. https://doi.org/10.3390/electronics13234771

Sun, Yihui, Fantao Meng, Junlu Gong, Yang Gao, Ruofei Chen, Lei Zhao, Dinggui Zeng, Ting Fu, Weiming He, and Yaohua Wang. 2024. "Optimization of Bifurcated Switching by Enhanced Synthetic Antiferromagnetic Layer" Electronics 13, no. 23: 4771. https://doi.org/10.3390/electronics13234771

Sun, Y., Meng, F., Gong, J., Gao, Y., Chen, R., Zhao, L., Zeng, D., Fu, T., He, W., & Wang, Y. (2024). Optimization of Bifurcated Switching by Enhanced Synthetic Antiferromagnetic Layer. Electronics, 13(23), 4771. https://doi.org/10.3390/electronics13234771