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Journal: ElectronicsVolume: 13Number: 4770
Article: Integrated Junction Barrier Schottky Diode and MOS-Channel Diode in SiC Planar MOSFETs for Optimization of Reverse Performances
- Authors:
- Xinyu Li1,2,3,
- Feng He1,2,3 and
- Xiping Niu1,2,3
- et al.
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