Wu, Z.; Bai, Y.; Yang, C.; Li, C.; Hao, J.; Tian, X.; Wang, A.; Tang, Y.; Lu, J.; Liu, X.
Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals. Electronics 2023, 12, 2133.
https://doi.org/10.3390/electronics12092133
AMA Style
Wu Z, Bai Y, Yang C, Li C, Hao J, Tian X, Wang A, Tang Y, Lu J, Liu X.
Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals. Electronics. 2023; 12(9):2133.
https://doi.org/10.3390/electronics12092133
Chicago/Turabian Style
Wu, Zhikang, Yun Bai, Chengyue Yang, Chengzhan Li, Jilong Hao, Xiaoli Tian, Antao Wang, Yidan Tang, Jiang Lu, and Xinyu Liu.
2023. "Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals" Electronics 12, no. 9: 2133.
https://doi.org/10.3390/electronics12092133
APA Style
Wu, Z., Bai, Y., Yang, C., Li, C., Hao, J., Tian, X., Wang, A., Tang, Y., Lu, J., & Liu, X.
(2023). Heavy Ion Induced Degradation Investigation on 4H-SiC JBS Diode with Different P+ Intervals. Electronics, 12(9), 2133.
https://doi.org/10.3390/electronics12092133
