Article Versions Notes

Zhang Z, Guo G, Li F, Sun H, Chen Q, Zhao S, Liu J, Ouyang X. Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation. Electronics. 2023; 12(4):1008. https://doi.org/10.3390/electronics12041008

Zhang, Zheng, Gang Guo, Futang Li, Haohan Sun, Qiming Chen, Shuyong Zhao, Jiancheng Liu, and Xiaoping Ouyang. 2023. "Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation" Electronics 12, no. 4: 1008. https://doi.org/10.3390/electronics12041008

Zhang, Z., Guo, G., Li, F., Sun, H., Chen, Q., Zhao, S., Liu, J., & Ouyang, X. (2023). Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation. Electronics, 12(4), 1008. https://doi.org/10.3390/electronics12041008