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Volume 12
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10.3390/electronics12214468
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Article

Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation

by
Daniela Munteanu
1,* and
Jean-Luc Autran
1,2
1
Aix-Marseille Univ, CNRS, IM2NP (UMR 7334), 13397 Marseille CEDEX 20, France
2
Univ. Rennes, CNRS, IPR (UMR 6251), 35 042 Rennes CEDEX, France
*
Author to whom correspondence should be addressed.
Electronics 2023, 12(21), 4468; https://doi.org/10.3390/electronics12214468
Submission received: 7 October 2023 / Revised: 21 October 2023 / Accepted: 28 October 2023 / Published: 30 October 2023
(This article belongs to the Special Issue Radiation Tolerant Electronics, Volume III)
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Abstract

This numerical simulation work investigates the basic physical mechanisms of single events induced in a target layer composed of silicon carbide exposed to natural radiation with atmospheric neutrons at the terrestrial level. Using direct calculations and extensive Geant4 simulations, this study provides an accurate investigation in terms of nuclear processes, recoil products, secondary ion production and fragment energy distributions. In addition, the thorough analysis includes a comparison between the responses to neutron irradiation of silicon carbide, carbon (diamond) and silicon targets. Finally, the consequences of these interactions in terms of the generation of electron–hole pairs, which is a fundamental mechanism underlying single-event transient effects at the device or circuit level, are discussed in detail.
Keywords: terrestrial cosmic rays; atmospheric neutrons; neutron–semiconductor interactions; silicon carbide; carbon-diamond; nuclear reactions; Geant4; numerical simulations; radiation effects on electronics; single-event effects terrestrial cosmic rays; atmospheric neutrons; neutron–semiconductor interactions; silicon carbide; carbon-diamond; nuclear reactions; Geant4; numerical simulations; radiation effects on electronics; single-event effects
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MDPI and ACS Style

Munteanu, D.; Autran, J.-L. Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation. Electronics 2023, 12, 4468. https://doi.org/10.3390/electronics12214468

AMA Style

Munteanu D, Autran J-L. Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation. Electronics. 2023; 12(21):4468. https://doi.org/10.3390/electronics12214468

Chicago/Turabian Style

Munteanu, Daniela, and Jean-Luc Autran. 2023. "Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation" Electronics 12, no. 21: 4468. https://doi.org/10.3390/electronics12214468

APA Style

Munteanu, D., & Autran, J.-L. (2023). Basic Mechanisms of Single-Event Occurrence in Silicon Carbide Semiconductor under Terrestrial Atmospheric Neutron Irradiation. Electronics, 12(21), 4468. https://doi.org/10.3390/electronics12214468

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