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Journal: ElectronicsVolume: 12Number: 4181
Article: Analysis of Difference in Areal Density Aluminum Equivalent Method in Ionizing Total Dose Shielding Analysis of Semiconductor Devices
- Authors:
- Mingyu Liu1,2,3,
- Chengfa He1,2,* and
- Jie Feng1,2,*
- et al.
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