Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier
Round 1
Reviewer 1 Report
This manuscript deals with high-electron mobility transistors (HEMTs), device production and On-state breakdown study. The ON-state breakdown loci of AlGaN/GaN HEMTs with AlGaN back barrier, and the impact ionization of acceptor-like traps have been studied based on gate extraction technique and temperature decreasing of 40 to -30 â—¦C, respectively. The electric field Ei has displayed a dependence of the temperature U-shaped and the anomalous behavior of the BVON loci and Ei below -10 â—¦C has been attributed to impurity scattering effect of acceptor-like traps in AlGaN/GaN heterostructures. I can recommend its publication after minor revisions, that are subjected to the editor´s decision.
- What is the junction type from the transistor?
- Figure 1 has displayed incorrectly along the introduction and some measurement units are unclear, (Page 2, line 48 ; Page 3, line 102).
- Consider replacing the expression resistance for resistivity (line 48), please.
- The Thevenin voltage to HEMTs has been described as equal to -3.3 V (line 56), however in figure 2(b) is hard to identify the Thevenin voltage to each signal.
- Could the authors describe the band energy profile as function of the gate region, please?
- (Page 4-lines 139-140) The negative shift of 0.2 V due to VDS on VTH has not been displayed. I suggest improving this issue, please.
Author Response
Dear reviewers:
Thank you for your review and careful check of our manuscript entitled "Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier". The manuscript has been revised accordingly. We have prepared a .pdf file to take response point-to-point to the your comments.
Author Response File: 
Author Response.pdf
Reviewer 2 Report
　Li et al. have reported temperature-dependent ON-state breakdown of AlGaN/GaN HEMTs with AlGaN back-barrier, showing a clear U-shaped temperature dependence from 40 to -10C°. In addition, a minimum Ei at -10 C° was determined. The demonstrated results are encouraging for further research and development of nitride-based HEMTs.
　However, the understanding of the experimental phenomena should be strengthened. The reviewer will reconsider recommending the publication of the manuscript if the following comments and suggestions are properly addressed.
- In Figure 3b. Most of the plots overlap and are not discernible. Especially if there is a response such as showing an enlarged plot in the area that the authors need to explain.
- In Figure 4a. The simulated curves seemed to be not well matched to the experimentally obtained curves. The authors should explain the reason and the limitation of the simulation using Equation (1).
- In Figure 4b. The resolution of the figure is not sufficient for publication. The authors should use a more high-quality image.
- The reasons for and evidence of impurity scattering due to acceptor-trapping should be described, if possible.
- The author should pay more attention to proofreading the text. For example, lines 103 and 112.
Author Response
Dear reviewers:
Thank you for your review and careful check of our manuscript entitled "Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier". The manuscript has been revised accordingly. We have prepared a .pdf file to take response point-to-point to the your comments.
Author Response File: Author Response.pdf
Reviewer 3 Report
Very interesting read. I think the scientific community will want to read this.
There are some awkward sentences in the introduction. For example starting with the word owing.
Could the authors add a comment why GaN HEMT typically hasn’t ran this on state test and why researchers should.
Could the authors include the gate metal used to create the Schottky barrier.
Could the authors describe how this effect is dependent on the Lgd of the device.
Author Response
Dear reviewers:
Thank you for your review and careful check of our manuscript entitled "Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier". The manuscript has been revised accordingly. We have prepared a .pdf file to take response point-to-point to the your comments.
Author Response File: Author Response.pdf
Round 2
Reviewer 1 Report
The authors have improved the manuscript, issues about the methodology and result analysis have been justified. I can recommend its publication in Electronics journal.
Author Response
Thank you for your kind review
Reviewer 2 Report
This manuscript has been well revised.
The revised manuscript is suitable for publication.
Author Response
Thank you for your kind review
