Order Article Reprints

Zhang X, Wei X, Zhang P, Zhang H, Zhang L, Deng X, Fan Y, Yu G, Dong Z, Fu H, et al. Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN_x/SiON as Composite Gate Dielectric. Electronics. 2022; 11(6):895. https://doi.org/10.3390/electronics11060895

Zhang, Xiaodong, Xing Wei, Peipei Zhang, Hui Zhang, Li Zhang, Xuguang Deng, Yaming Fan, Guohao Yu, Zhihua Dong, Houqiang Fu, and et al. 2022. "Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN_x/SiON as Composite Gate Dielectric" Electronics 11, no. 6: 895. https://doi.org/10.3390/electronics11060895

Zhang, X., Wei, X., Zhang, P., Zhang, H., Zhang, L., Deng, X., Fan, Y., Yu, G., Dong, Z., Fu, H., Cai, Y., Fu, K., & Zhang, B. (2022). Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN_x/SiON as Composite Gate Dielectric. Electronics, 11(6), 895. https://doi.org/10.3390/electronics11060895