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Lee I-G, Jo H-B, Baek J-M, Lee S-T, Choi S-M, Kim H-J, Park W-S, Yoo J-H, Ko D-H, Kim T-W, et al. L_g = 50 nm Gate-All-Around In_0.53Ga_0.47As Nanosheet MOSFETs with Regrown In_0.53Ga_0.47As Contacts. Electronics. 2022; 11(17):2744. https://doi.org/10.3390/electronics11172744

Lee, In-Geun, Hyeon-Bhin Jo, Ji-Min Baek, Sang-Tae Lee, Su-Min Choi, Hyo-Jin Kim, Wan-Soo Park, Ji-Hoon Yoo, Dae-Hong Ko, Tae-Woo Kim, and et al. 2022. "L_g = 50 nm Gate-All-Around In_0.53Ga_0.47As Nanosheet MOSFETs with Regrown In_0.53Ga_0.47As Contacts" Electronics 11, no. 17: 2744. https://doi.org/10.3390/electronics11172744

Lee, I.-G., Jo, H.-B., Baek, J.-M., Lee, S.-T., Choi, S.-M., Kim, H.-J., Park, W.-S., Yoo, J.-H., Ko, D.-H., Kim, T.-W., Kim, S.-K., Kim, J.-G., Yun, J., Kim, T., Lee, J.-H., Shin, C.-S., Lee, J.-H., Seo, K.-S., & Kim, D.-H. (2022). L_g = 50 nm Gate-All-Around In_0.53Ga_0.47As Nanosheet MOSFETs with Regrown In_0.53Ga_0.47As Contacts. Electronics, 11(17), 2744. https://doi.org/10.3390/electronics11172744