Ahn, H.; Ji, H.; Kang, D.; Son, S.-M.; Lee, S.; Han, J.
A 26–30 GHz GaN HEMT Low-Noise Amplifier Employing a Series Inductor-Based Stability Enhancement Technique. Electronics 2022, 11, 2716.
https://doi.org/10.3390/electronics11172716
AMA Style
Ahn H, Ji H, Kang D, Son S-M, Lee S, Han J.
A 26–30 GHz GaN HEMT Low-Noise Amplifier Employing a Series Inductor-Based Stability Enhancement Technique. Electronics. 2022; 11(17):2716.
https://doi.org/10.3390/electronics11172716
Chicago/Turabian Style
Ahn, Hyunbae, Honggu Ji, Dongmin Kang, Sung-Min Son, Sanghun Lee, and Junghwan Han.
2022. "A 26–30 GHz GaN HEMT Low-Noise Amplifier Employing a Series Inductor-Based Stability Enhancement Technique" Electronics 11, no. 17: 2716.
https://doi.org/10.3390/electronics11172716
APA Style
Ahn, H., Ji, H., Kang, D., Son, S.-M., Lee, S., & Han, J.
(2022). A 26–30 GHz GaN HEMT Low-Noise Amplifier Employing a Series Inductor-Based Stability Enhancement Technique. Electronics, 11(17), 2716.
https://doi.org/10.3390/electronics11172716