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Journal: Electronics, 2022
Volume: 11
Number: 91
Article:
Effects of Varying the Fin Width, Fin Height, Gate Dielectric Material, and Gate Length on the DC and RF Performance of a 14-nm SOI FinFET Structure
Authors:
by
Nour El I. Boukortt, Trupti Ranjan Lenka, Salvatore Patanè and Giovanni Crupi
Link:
https://www.mdpi.com/2079-9292/11/1/91
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