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Journal: Electronics, 2021
Volume: 10
Number: 735
Article:
Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET
Authors:
by
Fortunato Pezzimenti, Hichem Bencherif, Giuseppe De Martino, Lakhdar Dehimi, Riccardo Carotenuto, Massimo Merenda and Francesco G. Della Corte
Link:
https://www.mdpi.com/2079-9292/10/6/735
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