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Pezzimenti F, Bencherif H, De Martino G, Dehimi L, Carotenuto R, Merenda M, Della Corte FG. Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET. Electronics. 2021; 10(6):735. https://doi.org/10.3390/electronics10060735

Pezzimenti, Fortunato, Hichem Bencherif, Giuseppe De Martino, Lakhdar Dehimi, Riccardo Carotenuto, Massimo Merenda, and Francesco G. Della Corte. 2021. "Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET" Electronics 10, no. 6: 735. https://doi.org/10.3390/electronics10060735

Pezzimenti, F., Bencherif, H., De Martino, G., Dehimi, L., Carotenuto, R., Merenda, M., & Della Corte, F. G. (2021). Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET. Electronics, 10(6), 735. https://doi.org/10.3390/electronics10060735