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Article

Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications

1
Laboratoire Modélisation et Simulation de Composants (LMSC), Faculté des Sciences, Université des Sciences et Techniques de Masuku (USTM), BP 941 Franceville, Gabon
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Department of Electrical Engineering, Ecole Polytechnique, Université des Sciences et Techniques de Masuku (USTM), BP 941 Franceville, Gabon
3
IJL—Institut Jean Lamour, UMR 7198, Université de Lorraine—CNRS, 54000 Nancy, France
*
Authors to whom correspondence should be addressed.
Academic Editor: Iliana Marinova
Electronics 2021, 10(4), 370; https://doi.org/10.3390/electronics10040370
Received: 1 January 2021 / Revised: 27 January 2021 / Accepted: 29 January 2021 / Published: 3 February 2021
(This article belongs to the Special Issue Recent Advances in Electromechanical Systems)
This paper presents a two-dimensional FEM (Finite Element Method) modeling and simulation of a surface acoustic wave (SAW) resonator based on a layered Pt/AlN/Sapphire structure. Such structure that exploits the electromechanical coupling of piezoelectric film is of high interest for harsh environments. By harsh environment we mean any environment that could hinder the operation of the device. Hardness can come from a variety of sources, and examples include the following: High pressure, High temperature, Shock/high vibration, Radiation, Harsh chemicals, etc. As part of this work, we are looking for high temperature sensor applications and only operating drifts due to temperature will be studied. SAW resonator is made from piezoelectric thin film Aluminum Nitride (AlN) layer on Sapphire substrate. Modal analysis is used to determine the eigen mode and the eigenfrequency of the system and the study of the frequency domain is used to determine the response of the model under influence of a harmonic excitation for one or more frequencies. In the FEM modeling, various parameters of the surface waves in the films, such as the surface velocity, the displacement of the piezoelectric thin film, the electrical potential, the electromechanical coefficient (k2), and the quality factor (Q) were studied. A comparative study between modeled and experimental curves showed a good agreement and allowed to validate our simulation method. Finally, a FEM study of the influence of normalized thickness of AlN thin film on resonator performances was carried out and compared with theorical results of literature. View Full-Text
Keywords: FEM; SAW; resonator; piezoelectric material; IDT; aluminum nitride FEM; SAW; resonator; piezoelectric material; IDT; aluminum nitride
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MDPI and ACS Style

Jean Claude, A.O.; Eloi Jean Jacques, B.; Gaston, N.M.; Adoum, T.N.; Elysée, O.N.; Omar, E. Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications. Electronics 2021, 10, 370. https://doi.org/10.3390/electronics10040370

AMA Style

Jean Claude AO, Eloi Jean Jacques B, Gaston NM, Adoum TN, Elysée ON, Omar E. Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications. Electronics. 2021; 10(4):370. https://doi.org/10.3390/electronics10040370

Chicago/Turabian Style

Jean Claude, Asseko O., Blampain Eloi Jean Jacques, N’tchayi M. Gaston, Traore N. Adoum, Obame N. Elysée, and Elmazria Omar. 2021. "Modeling and Electrical Characterization of a Bilayer Pt/AlN/Sapphire One Port Resonator for Sensor Applications" Electronics 10, no. 4: 370. https://doi.org/10.3390/electronics10040370

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