Ramezani, A.H.; Hoseinzadeh, S.; Ebrahiminejad, Z.; Sangashekan, M.; Memon, S.
Microstructural and Energy-Dispersive X-ray Analyses on Argon Ion Implantations in Tantalum Thin Films for Microelectronic Substrates. Electronics 2021, 10, 2941.
https://doi.org/10.3390/electronics10232941
AMA Style
Ramezani AH, Hoseinzadeh S, Ebrahiminejad Z, Sangashekan M, Memon S.
Microstructural and Energy-Dispersive X-ray Analyses on Argon Ion Implantations in Tantalum Thin Films for Microelectronic Substrates. Electronics. 2021; 10(23):2941.
https://doi.org/10.3390/electronics10232941
Chicago/Turabian Style
Ramezani, Amir Hoshang, Siamak Hoseinzadeh, Zhaleh Ebrahiminejad, Milad Sangashekan, and Saim Memon.
2021. "Microstructural and Energy-Dispersive X-ray Analyses on Argon Ion Implantations in Tantalum Thin Films for Microelectronic Substrates" Electronics 10, no. 23: 2941.
https://doi.org/10.3390/electronics10232941
APA Style
Ramezani, A. H., Hoseinzadeh, S., Ebrahiminejad, Z., Sangashekan, M., & Memon, S.
(2021). Microstructural and Energy-Dispersive X-ray Analyses on Argon Ion Implantations in Tantalum Thin Films for Microelectronic Substrates. Electronics, 10(23), 2941.
https://doi.org/10.3390/electronics10232941