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Volume 10
Issue 18
10.3390/electronics10182290
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Article

Highly Stable Inverted CdSe/ZnS-Based Light-Emitting Diodes by Nonvacuum Technique ZTO as the Electron-Transport Layer

by
Sajid Hussain
1,†,
Fawad Saeed
1,†,
Ahmad Raza
1,
Abida Parveen
1,
Ali Asghar
1,
Nasrud Din
1,
Zhang Chao
2,
Jing Chen
1,*,
Qasim Khan
1,3,* and
Wei Lei
1,*
1
Joint International Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
2
The Key Laboratory of MEMS of the Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
3
Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518000, China
*
Authors to whom correspondence should be addressed.
†
These authors contributed to the manuscript equally.
Electronics 2021, 10(18), 2290; https://doi.org/10.3390/electronics10182290
Submission received: 13 August 2021 / Revised: 5 September 2021 / Accepted: 7 September 2021 / Published: 17 September 2021
(This article belongs to the Special Issue Selected Papers from International Conference on Electron Devices and Applications (ICEDA 2021))
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Abstract

CdSe/ZnS quantum dots (QDs) have attracted great consideration from investigators owing to their excellent photo-physical characteristics and application in quantum dot light-emitting diodes (QD-LEDs). The CdSe/ZnS-based inverted QD-LEDs structure uses high-quality semiconductors electron transport layers (ETLs), a multilayered hole transporting layers (HTLs). In QD-LED, designing a device structure with a minimum energy barrier between adjacent layers is very important to achieve high efficiency. A high mobility polymer of poly (9,9-dioctylfluorene-co-N-(4-(3-methylpropyl)) diphenylamine (TFB) was doped with 4,4′-bis-(carbazole-9-yl) biphenyl (CBP) with deep energy level to produce composite TFB:CBP holes to solve energy mismatch (HTL). In addition, we also improved the QD-LED device structure by using zinc tin oxide (ZTO) as ETL to improve device efficiency. The device turn-on voltage Vt (1 cd m−2) with ZTO ETL reduced from 2.4 V to 1.9 V significantly. Furthermore, invert structure devices exhibit luminance of 4296 cd m−2, current-efficiency (CE) of 7.36 cd A−1, and external-quantum efficiency (EQE) of 3.97%. For the QD-LED based on ZTO, the device efficiency is improved by 1.7 times.
Keywords: light-emitting diode; Zinc tin oxide; composite hole transport layer; CdSe/ZnS light-emitting diode; Zinc tin oxide; composite hole transport layer; CdSe/ZnS
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MDPI and ACS Style

Hussain, S.; Saeed, F.; Raza, A.; Parveen, A.; Asghar, A.; Din, N.; Chao, Z.; Chen, J.; Khan, Q.; Lei, W. Highly Stable Inverted CdSe/ZnS-Based Light-Emitting Diodes by Nonvacuum Technique ZTO as the Electron-Transport Layer. Electronics 2021, 10, 2290. https://doi.org/10.3390/electronics10182290

AMA Style

Hussain S, Saeed F, Raza A, Parveen A, Asghar A, Din N, Chao Z, Chen J, Khan Q, Lei W. Highly Stable Inverted CdSe/ZnS-Based Light-Emitting Diodes by Nonvacuum Technique ZTO as the Electron-Transport Layer. Electronics. 2021; 10(18):2290. https://doi.org/10.3390/electronics10182290

Chicago/Turabian Style

Hussain, Sajid, Fawad Saeed, Ahmad Raza, Abida Parveen, Ali Asghar, Nasrud Din, Zhang Chao, Jing Chen, Qasim Khan, and Wei Lei. 2021. "Highly Stable Inverted CdSe/ZnS-Based Light-Emitting Diodes by Nonvacuum Technique ZTO as the Electron-Transport Layer" Electronics 10, no. 18: 2290. https://doi.org/10.3390/electronics10182290

APA Style

Hussain, S., Saeed, F., Raza, A., Parveen, A., Asghar, A., Din, N., Chao, Z., Chen, J., Khan, Q., & Lei, W. (2021). Highly Stable Inverted CdSe/ZnS-Based Light-Emitting Diodes by Nonvacuum Technique ZTO as the Electron-Transport Layer. Electronics, 10(18), 2290. https://doi.org/10.3390/electronics10182290

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