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Journal: ElectronicsVolume: 10Number: 1503
Article: Numerical Analysis of the High Pressure MOVPE Upside-Down Reactor for GaN Growth
  • Authors:
  • Przemyslaw Niedzielski1,*,
  • Ewa Raj1 and
  • Zbigniew Lisik1
  • et al.
Link: https://www.mdpi.com/2079-9292/10/12/1503

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