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Sizing of SRAM Cell with Voltage Biasing Techniques for Reliability Enhancement of Memory and PUF Functions
 
 

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Journal: J. Low Power Electron. Appl., 2017
Volume: 7
Number: 2

Article: On Improving Reliability of SRAM-Based Physically Unclonable Functions
Authors: by Arunkumar Vijayakumar, Vinay C. Patil and Sandip Kundu
Link: https://www.mdpi.com/2079-9268/7/1/2

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