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Open AccessArticle

Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View

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LSI/PSI—Integrated Systems Laboratory/Department of Electronic Systems Engineering, University of Sao Paulo, Av. Prof. Luciano Gualberto, trav.3, n.158, Sao Paulo 05508-010, Brazil
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IMEC—Interuniversity Microelectronic Centre, Kapeldreef 75, B-3001 Leuven, Belgium
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Electrical Engineering Department, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
*
Author to whom correspondence should be addressed.
The original of this paper had been presented in IEEE S3S Conference 2014.
Academic Editors: David Bol and Steven A. Vitale
J. Low Power Electron. Appl. 2015, 5(2), 69-80; https://doi.org/10.3390/jlpea5020069
Received: 19 February 2015 / Revised: 16 April 2015 / Accepted: 21 April 2015 / Published: 29 April 2015
(This article belongs to the Special Issue Selected Papers from IEEE S3S Conference 2014)
This work presents an analysis about the influence of the gate and source/drain underlap length (LUL) on UTBB FDSOI (UltraThin-Body-and-Buried-oxide Fully-Depleted-Silicon-On-Insulator) devices operating in conventional (VB = 0 V), dynamic threshold (DT, VB = VG), and the enhanced DT (eDT, VB = kVG) configurations, focusing on low power applications. It is shown that the underlap devices present a lower off-state current (IOFF at VG = 0 V), lower subthreshold swing (S), lower gate-induced drain leakage (GIDL), higher transconductance over drain current (gm/ID) ratio and higher intrinsic voltage gain (|AV|) due to their longer effective channel length in weak inversion and lower lateral electric field, while the eDT mode presents higher on-state current (ION) with the same IOFF, lower S, higher maximum transconductance (gmmax), lower threshold voltage (VT), higher gm/ID ratio and higher |AV| due to the dynamically reduced threshold voltage and stronger transversal electric field. View Full-Text
Keywords: dynamic threshold; UTBB; underlap; low power applications dynamic threshold; UTBB; underlap; low power applications
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Sasaki, K.R.A.; Aoulaiche, M.; Simoen, E.; Claeys, C.; Martino, J.A. Extensionless UTBB FDSOI Devices in Enhanced Dynamic Threshold Mode under Low Power Point of View. J. Low Power Electron. Appl. 2015, 5, 69-80.

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