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Journal: J. Low Power Electron. Appl., 2020
Volume: 10
Number: 3

Article: Threshold Voltage Degradation for n-Channel 4H-SiC Power MOSFETs
Authors: by Esteban Guevara, Victor Herrera-Pérez, Cristian Rocha and Katherine Guerrero
Link: https://www.mdpi.com/2079-9268/10/1/3

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