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Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

1
Department of Electrical Engineering, National Chi-Nan University, Nan-Tou 54561, Taiwan
2
Department of Materials Science and Engineering, Feng Chia University, Taichung 40724, Taiwan
3
Department of Materials Science and Engineering, National Formosa University, Huwei 63201, Taiwan
*
Author to whom correspondence should be addressed.
Coatings 2019, 9(4), 246; https://doi.org/10.3390/coatings9040246
Received: 1 March 2019 / Revised: 1 April 2019 / Accepted: 8 April 2019 / Published: 11 April 2019
(This article belongs to the Special Issue Manufacturing and Surface Engineering II)
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Abstract

Highly porous low-dielectric-constant (low-k) dielectric materials with a dielectric constant (k) less than 2.50 are needed for 32 nm and beyond technological nodes. In this study, a highly porous low-k dielectric film with a k value of 2.25, open porosity of 32.0%, and pore diameter of 1.15 nm were treated by 3-Aminopropyltrimethoxysilane (APTMS) in wet solution in order to form self-assembled monolayers (SAMs) onto it. The effects of the formation SAMs on the electrical characteristics and reliability of highly porous low-k dielectric films were characterized. As SAMs were formed onto the highly porous low-k dielectric film by APTMS treatment, the dielectric breakdown field and the failure time were significantly improved, but at the expense of the increases in the dielectric constant and leakage current. Moreover, the formation SAMs enhanced the Cu barrier performance for highly porous low-k dielectric films. Therefore, the SAMs derived from APTMS treatment are promising for highly porous low-k dielectric films to ensure better integrity. View Full-Text
Keywords: low-dielectric-constant; porous dielectric; self-assembled monolayers; Cu barrier; reliability; time-dependent-dielectric-breakdown low-dielectric-constant; porous dielectric; self-assembled monolayers; Cu barrier; reliability; time-dependent-dielectric-breakdown
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Cheng, Y.-L.; Haung, C.-W.; Lee, C.-Y.; Chen, G.-S.; Fang, J.-S. Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment. Coatings 2019, 9, 246.

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