Thi, T.A.T.; Kuo, D.-H.; Cao, P.T.; Quoc-Phong, P.; Nghi, V.K.; Tran, N.P.L.
Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode. Coatings 2019, 9, 685.
https://doi.org/10.3390/coatings9100685
AMA Style
Thi TAT, Kuo D-H, Cao PT, Quoc-Phong P, Nghi VK, Tran NPL.
Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode. Coatings. 2019; 9(10):685.
https://doi.org/10.3390/coatings9100685
Chicago/Turabian Style
Thi, Tran Anh Tuan, Dong-Hau Kuo, Phuong Thao Cao, Pham Quoc-Phong, Vinh Khanh Nghi, and Nguyen Phuong Lan Tran.
2019. "Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode" Coatings 9, no. 10: 685.
https://doi.org/10.3390/coatings9100685
APA Style
Thi, T. A. T., Kuo, D.-H., Cao, P. T., Quoc-Phong, P., Nghi, V. K., & Tran, N. P. L.
(2019). Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode. Coatings, 9(10), 685.
https://doi.org/10.3390/coatings9100685