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Open AccessArticle

Study on the Properties of 1319 nm Ultra-High Reflector Deposited by Electron Beam Evaporation Assisted by an Energetic RF Ion Source

Key Laboratory of Chemical Lasers, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
Author to whom correspondence should be addressed.
Coatings 2018, 8(2), 74;
Received: 24 December 2017 / Revised: 3 February 2018 / Accepted: 6 February 2018 / Published: 14 February 2018
(This article belongs to the Special Issue Applications of Optical Thin Film Coatings)
PDF [4614 KB, uploaded 14 February 2018]


Ultra-high reflectors, working as a critical optical component, has been widely applied as a cavity mirror in fine optical systems such as laser gyro, F-P interferometer, etc. For decades, ion beam sputtering (IBS) technology, which can deposit ultra-low loss and dense layers, has been commonly believed to be the only and irreplaceable method to fabricate ultra-high reflectors. Thus, reports on other methods are rare and a reflectivity above 99.99% obtained by evaporation technology (including ion assisted evaporation) has not been seen yet. In the present study, an energetic radio frequency (RF) ion source was introduced during the electron beam evaporation process, which improved the layer quality dramatically. An ultra-high reflector at 1319 nm with reflectivity of 99.992% (measured by cavity-ring down method) was successfully deposited on a φ100 mm × 25 mm single crystal silicon substrate whose surface roughness was approximately 0.420 nm. The surface figure of the reflector was accurately controlled superior to 1/6λ (λ = 632.8 nm). The measured absorption was approximately 3–5 ppm and the calculated scatter based on surface roughness measurement was approximately 6.64 ppm. Total loss of the reflector was systematically discussed. This study showed that it is possible to apply electron beam evaporation in ultra-high reflector manufacture and the method is capable of depositing reflectors with an aperture larger than φ600 mm which is the maximum capacity of current IBS technology. View Full-Text
Keywords: electron beam evaporation; ultra-high reflector; ion source electron beam evaporation; ultra-high reflector; ion source

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Deng, S.; Li, G.; Wang, F.; Lv, Q.; Sun, L.; Jin, Y. Study on the Properties of 1319 nm Ultra-High Reflector Deposited by Electron Beam Evaporation Assisted by an Energetic RF Ion Source. Coatings 2018, 8, 74.

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