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Barrier Heights of Au on Diamond with Different Terminations Determined by X-ray Photoelectron Spectroscopy

Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, China
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Coatings 2017, 7(7), 88; https://doi.org/10.3390/coatings7070088
Received: 8 May 2017 / Revised: 21 June 2017 / Accepted: 27 June 2017 / Published: 29 June 2017
Barrier heights of Au on hydrogen-/oxygen-/fluorine-/nitrogen-terminated diamond (H-/O-/F-/N-diamond) have been investigated by X-ray photoelectron spectroscopy. All of the H-/O-/F-/N-diamond surfaces have been formed on different areas of one diamond sample. An Au film with a thickness of 4 nm was evaporated to form Au/diamond contacts. Barrier height values for Au on H-/O-/F-/N-diamond contacts were determined to be −0.19, 1.71, 2.29, and 2.39 eV, respectively. Then, the surface of Au/diamond contacts was treated by 1000 eV Ar+ bombardment with different duration of time, resulting in a pinned barrier height of 1.83 eV independent of contact structures. In the end, the spatial distribution of the energy band diagram has been calculated by solving Poisson’s equation. View Full-Text
Keywords: XPS; diamond; surface terminations; Schottky barrier; ohmic contact; ion bombardment XPS; diamond; surface terminations; Schottky barrier; ohmic contact; ion bombardment
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Li, F.; Zhang, J.; Wang, X.; Zhang, M.; Wang, H. Barrier Heights of Au on Diamond with Different Terminations Determined by X-ray Photoelectron Spectroscopy. Coatings 2017, 7, 88.

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