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Open AccessArticle

Ta–Zr–N Thin Films Fabricated through HIPIMS/RFMS Co-Sputtering

Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
Center for Thin Film Technologies and Applications, Ming Chi University of Technology, New Taipei City 24301, Taiwan
Author to whom correspondence should be addressed.
Academic Editor: Pascal Briois
Coatings 2017, 7(11), 189;
Received: 31 August 2017 / Revised: 19 October 2017 / Accepted: 2 November 2017 / Published: 4 November 2017
(This article belongs to the Special Issue Thin Film Deposition and Characterization Techniques)
PDF [5927 KB, uploaded 6 November 2017]


Ta–Zr–N thin films were fabricated through co-deposition of radio-frequency magnetron sputtering and high-power impulse magnetron sputtering (HIPIMS/RFMS co-sputtering). The oxidation resistance of the fabricated films was evaluated by annealing the samples in a 15-ppm O2-N2 atmosphere at 600 °C for 4 and 8 h. The mechanical properties and surface roughness of the as-deposited and annealed thin films were evaluated. The results indicated that the HIPIMS/RFMS co-sputtered Ta–Zr–N thin films exhibited superior mechanical properties and lower surface roughness than did the conventional direct current-sputtered Ta–Zr–N thin films and HIPIMS-fabricated ZrNx thin films in both the as-deposited and annealed states. View Full-Text
Keywords: annealing; HIPIMS; mechanical properties; oxidation resistance annealing; HIPIMS; mechanical properties; oxidation resistance

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MDPI and ACS Style

Chang, L.-C.; Chang, C.-Y.; You, Y.-W. Ta–Zr–N Thin Films Fabricated through HIPIMS/RFMS Co-Sputtering. Coatings 2017, 7, 189.

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