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Correction

Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423

College of Information Science and Engineering, Huaqiao University, Xiamen 361021, China
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Author to whom correspondence should be addressed.
Coatings 2025, 15(3), 328; https://doi.org/10.3390/coatings15030328
Submission received: 7 March 2025 / Accepted: 7 March 2025 / Published: 13 March 2025
There was an error in the original publication [1]. An error was made in Equation (16), where a variable (Cox) was not included. The correct equation is given below:
I d s = μ e f f C o x W L V g s V f b + Q T + Q D C o x φ s 1 2 φ s 2 + V T Q i φ s φ s s φ s d
The authors state that the scientific conclusions are unaffected. This correction was approved by the Academic Editor. The original publication has also been updated.

Reference

  1. Song, Z.; Wang, S.; Han, Y.; Huang, G.; Xu, C. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423. [Google Scholar] [CrossRef]
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MDPI and ACS Style

Song, Z.; Wang, S.; Han, Y.; Huang, G.; Xu, C. Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423. Coatings 2025, 15, 328. https://doi.org/10.3390/coatings15030328

AMA Style

Song Z, Wang S, Han Y, Huang G, Xu C. Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423. Coatings. 2025; 15(3):328. https://doi.org/10.3390/coatings15030328

Chicago/Turabian Style

Song, Zhaoxu, Shichun Wang, Yujie Han, Gongyi Huang, and Chuanzhong Xu. 2025. "Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423" Coatings 15, no. 3: 328. https://doi.org/10.3390/coatings15030328

APA Style

Song, Z., Wang, S., Han, Y., Huang, G., & Xu, C. (2025). Correction: Song et al. An Analytical Surface Potential and Effective Charge Density Approach Based Drain Current Model for Amorphous InGaZnO Thin-Film Transistors. Coatings 2023, 13, 423. Coatings, 15(3), 328. https://doi.org/10.3390/coatings15030328

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