Article Versions Notes

Xu H, Li P, Chen Z, Yang B, Wei B, Fu C, Ding X, Zhang J. Enhanced Stability of Solution-Processed Indium–Zinc–Tin–Oxide Transistors by Tantalum Cation Doping. Coatings. 2023; 13(4):767. https://doi.org/10.3390/coatings13040767

Xu, Haiyang, Pingping Li, Zihui Chen, Bing Yang, Bin Wei, Chaoying Fu, Xingwei Ding, and Jianhua Zhang. 2023. "Enhanced Stability of Solution-Processed Indium–Zinc–Tin–Oxide Transistors by Tantalum Cation Doping" Coatings 13, no. 4: 767. https://doi.org/10.3390/coatings13040767

Xu, H., Li, P., Chen, Z., Yang, B., Wei, B., Fu, C., Ding, X., & Zhang, J. (2023). Enhanced Stability of Solution-Processed Indium–Zinc–Tin–Oxide Transistors by Tantalum Cation Doping. Coatings, 13(4), 767. https://doi.org/10.3390/coatings13040767