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Article

A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells

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UNITEN R&D Sdn. Bhd., Universiti Tenaga Nasional (UNITEN), Kajang 43000, Selangor, Malaysia
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Institute of Sustainable Energy, Universiti Tenaga Nasional (UNITEN), Kajang 43000, Selangor, Malaysia
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College of Engineering, Universiti Tenaga Nasional (UNITEN), Kajang 43000, Selangor, Malaysia
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Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia (UKM), Bangi 43600, Selangor, Malaysia
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Graphene & Advanced 2D Materials Research Group (GAMRG), School of Science and Technology (SST), Sunway University, No. 5, Jalan Universiti, Petaling Jaya 47500, Selangor, Malaysia
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TNB Renewables Sdn. Bhd. (TRe), Level 31, PJX-HM Shah Tower, 16A Persiaran Barat, Petaling Jaya 46050, Selangor, Malaysia
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Authors to whom correspondence should be addressed.
Academic Editors: Isodiana Crupi and Daniele Scirè
Coatings 2021, 11(8), 930; https://doi.org/10.3390/coatings11080930
Received: 18 June 2021 / Revised: 16 July 2021 / Accepted: 26 July 2021 / Published: 3 August 2021
(This article belongs to the Special Issue Achievements and Challenges in Thin Film Solar Cells)
The influence of Molybdenum diselenide (MoSe2) as an interfacial layer between Cu(In,Ga)Se2 (CIGS) absorber layer and Molybdenum (Mo) back contact in a conventional CIGS thin-film solar cell was investigated numerically using SCAPS-1D (a Solar Cell Capacitance Simulator). Using graded bandgap profile of the absorber layer that consist of both back grading (BG) and front grading (FG), which is defined as double grading (DG), attribution to the variation in Ga content was studied. The key focus of this study is to explore the combinatorial effects of MoSe2 contact layer and Ga grading of the absorber to suppress carrier losses due to back contact recombination and resistance that usually occur in case of standard Mo thin films. Thickness, bandgap energy, electron affinity and carrier concentration of the MoSe2 layer were all varied to determine the best configuration for incorporating into the CIGS solar cell structure. A bandgap grading profile that offers optimum functionality in the proposed configuration with additional MoSe2 layer has also been investigated. From the overall results, CIGS solar cells with thin MoSe2 layer and high acceptor doping concentration have been found to outperform the devices without MoSe2 layer, with an increase in efficiency from 20.19% to 23.30%. The introduction of bandgap grading in the front and back interfaces of the absorber layer further improves both open-circuit voltage (VOC) and short-circuit current density (JSC), most likely due to the additional quasi-electric field beneficial for carrier collection and reduced back surface and bulk recombination. A maximum power conversion efficiency (PCE) of 28.06%, fill factor (FF) of 81.89%, JSC of 39.45 mA/cm2, and VOC of 0.868 V were achieved by optimizing the properties of MoSe2 layer and bandgap grading configuration of the absorber layer. This study provides an insight into the different possibilities for designing higher efficiency CIGS solar cell structure through the manipulation of naturally formed MoSe2 layer and absorber bandgap engineering that can be experimentally replicated. View Full-Text
Keywords: CIGS; molybdenum diselenide (MoSe2); bandgap grading; back grading (BG); front grading (FG); double grading (DG); SCAPS; simulation; power conversion efficiency (PCE) CIGS; molybdenum diselenide (MoSe2); bandgap grading; back grading (BG); front grading (FG); double grading (DG); SCAPS; simulation; power conversion efficiency (PCE)
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MDPI and ACS Style

Za’abar, F.I.; Yusoff, Y.; Mohamed, H.; Abdullah, S.F.; Mahmood Zuhdi, A.W.; Amin, N.; Chelvanathan, P.; Bahrudin, M.S.; Rahman, K.S.; Samsudin, N.A.; Wan Abdullah, W.S. A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells. Coatings 2021, 11, 930. https://doi.org/10.3390/coatings11080930

AMA Style

Za’abar FI, Yusoff Y, Mohamed H, Abdullah SF, Mahmood Zuhdi AW, Amin N, Chelvanathan P, Bahrudin MS, Rahman KS, Samsudin NA, Wan Abdullah WS. A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells. Coatings. 2021; 11(8):930. https://doi.org/10.3390/coatings11080930

Chicago/Turabian Style

Za’abar, Fazliyana I., Yulisa Yusoff, Hassan Mohamed, Siti F. Abdullah, Ahmad W. Mahmood Zuhdi, Nowshad Amin, Puvaneswaran Chelvanathan, Mohd. S. Bahrudin, Kazi S. Rahman, Nurul A. Samsudin, and Wan S. Wan Abdullah. 2021. "A Numerical Investigation on the Combined Effects of MoSe2 Interface Layer and Graded Bandgap Absorber in CIGS Thin Film Solar Cells" Coatings 11, no. 8: 930. https://doi.org/10.3390/coatings11080930

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