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Journal: Coatings, 2021
Volume: 11
Number: 568
Article:
Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD
Authors:
by
Dae-Seop Byeon, Choonghee Cho, Dongmin Yoon, Yongjoon Choi, Kiseok Lee, Seunghyun Baik and Dae-Hong Ko
Link:
https://www.mdpi.com/2079-6412/11/5/568
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