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Journal: Coatings, 2021
Volume: 11
Number: 568
568
Article: Epitaxial Growth of Si and SiGe Using High-Order Silanes without a Carrier Gas at Low Temperatures via UHVCVD and LPCVD
Authors: by Dae-Seop Byeon, Choonghee Cho, Dongmin Yoon, Yongjoon Choi, Kiseok Lee, Seunghyun Baik and Dae-Hong Ko
Link: https://www.mdpi.com/2079-6412/11/5/568

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