Anitha, M.; Deva Arun Kumar, K.; Mele, P.; Anitha, N.; Saravanakumar, K.; Sayed, M.A.; Ali, A.M.; Amalraj, L.
Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices. Coatings 2021, 11, 425.
https://doi.org/10.3390/coatings11040425
AMA Style
Anitha M, Deva Arun Kumar K, Mele P, Anitha N, Saravanakumar K, Sayed MA, Ali AM, Amalraj L.
Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices. Coatings. 2021; 11(4):425.
https://doi.org/10.3390/coatings11040425
Chicago/Turabian Style
Anitha, Mannarsamy, Karuppiah Deva Arun Kumar, Paolo Mele, Nagarajan Anitha, Karunamoorthy Saravanakumar, Mahmoud Ahmed Sayed, Atif Mossad Ali, and Lourdusamy Amalraj.
2021. "Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices" Coatings 11, no. 4: 425.
https://doi.org/10.3390/coatings11040425
APA Style
Anitha, M., Deva Arun Kumar, K., Mele, P., Anitha, N., Saravanakumar, K., Sayed, M. A., Ali, A. M., & Amalraj, L.
(2021). Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices. Coatings, 11(4), 425.
https://doi.org/10.3390/coatings11040425