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Volume 11
Issue 4
10.3390/coatings11040425
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Article

Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices

by
Mannarsamy Anitha
1,
Karuppiah Deva Arun Kumar
2,
Paolo Mele
2,*,
Nagarajan Anitha
3,
Karunamoorthy Saravanakumar
4,
Mahmoud Ahmed Sayed
5,6,
Atif Mossad Ali
5,6 and
Lourdusamy Amalraj
7
1
Department of Physics, Sri Vidhya College of Arts and Science, Virudhunagar 626005, India
2
Shibaura Institute of Technology, College of Engineering, Saitama 337-8570, Japan
3
Department of Physics, Devanga Arts College, Arupukottai 626101, India
4
Department of Chemistry, VHNSN College, Virudhunagar Tamilnadu 626001, India
5
Department of Physics, Faculty of Science, King Khalid University, Abha 61413, Saudi Arabia
6
Physics Department, Faculty of Science, Al-Azher University, Assiut 71524, Egypt
7
Department of Physics, VHNSN College, Virudhunagar 626001, India
*
Author to whom correspondence should be addressed.
Coatings 2021, 11(4), 425; https://doi.org/10.3390/coatings11040425
Submission received: 7 March 2021 / Revised: 1 April 2021 / Accepted: 2 April 2021 / Published: 7 April 2021
(This article belongs to the Special Issue Functional Oxide Thin Films and Nanostructures: Growth, Properties, and Applications)
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Abstract

We developed silver-doped Cd1–xAgxO thin films (where x = 0, 0.01, 0.02, 0.03 and 0.04) on amorphous glass substrate by an automated nebulizer spray pyrolysis set-up. The XRD patterns show rock salt cubic crystal structures, and the crystallite sizes vary with respect to Ag doping concentrations. SEM images exhibited a uniform distribution of grains with the addition of Ag; this feature could support the enhancement of electron mobility. The transmittance spectra reveal that all films show high transmittance in the visible region with the observed bandgap of about 2.40 eV. The room temperature photoluminescence (PL) studies show the increase of near-band-edge (NBE) emission of the films prepared by different Ag doping levels, resulting in respective decreases in the bandgaps. The photodiode performance was analyzed for the fabricated p-Si/n-Cd1–xAgxO devices. The responsivity, external quantum efficiency and detectivity of the prepared p-Si/n-Cd1–xAgxO device were investigated. The repeatability of the optimum (3 at.% Ag) photodiode was also studied. The present investigation suggests that Cd1–xAgxO thin films are the potential candidates for various industrial and photodetector applications.
Keywords: Cd1-xAgxO thin films; p-Si/n-Cd1–xAgxO; PL; photodiode Cd1-xAgxO thin films; p-Si/n-Cd1–xAgxO; PL; photodiode

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MDPI and ACS Style

Anitha, M.; Deva Arun Kumar, K.; Mele, P.; Anitha, N.; Saravanakumar, K.; Sayed, M.A.; Ali, A.M.; Amalraj, L. Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices. Coatings 2021, 11, 425. https://doi.org/10.3390/coatings11040425

AMA Style

Anitha M, Deva Arun Kumar K, Mele P, Anitha N, Saravanakumar K, Sayed MA, Ali AM, Amalraj L. Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices. Coatings. 2021; 11(4):425. https://doi.org/10.3390/coatings11040425

Chicago/Turabian Style

Anitha, Mannarsamy, Karuppiah Deva Arun Kumar, Paolo Mele, Nagarajan Anitha, Karunamoorthy Saravanakumar, Mahmoud Ahmed Sayed, Atif Mossad Ali, and Lourdusamy Amalraj. 2021. "Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices" Coatings 11, no. 4: 425. https://doi.org/10.3390/coatings11040425

APA Style

Anitha, M., Deva Arun Kumar, K., Mele, P., Anitha, N., Saravanakumar, K., Sayed, M. A., Ali, A. M., & Amalraj, L. (2021). Synthesis and Properties of p-Si/n-Cd1−xAgxO Heterostructure for Transparent Photodiode Devices. Coatings, 11(4), 425. https://doi.org/10.3390/coatings11040425

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