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Open AccessFeature PaperEditor’s ChoiceArticle

Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Laser

1
CNR-IOM, TASC Laboratory in Area Science Park, 34139 Trieste, Italy
2
International Centre for Theoretical Physics (ICTP), 34100 Trieste, Italy
3
Department of Physics, University of Milano, 20133 Milano, Italy
4
Institute of Semiconductors and Solid-State Physics, Johannes Kepler University, 69 Altenbergerstrasse, 4040 Linz, Austria
5
CNR-SPIN, UOS Salerno, 84084 Fisciano (SA), Italy
*
Authors to whom correspondence should be addressed.
Academic Editor: Emanuel Axente
Coatings 2021, 11(3), 276; https://doi.org/10.3390/coatings11030276
Received: 4 February 2021 / Revised: 17 February 2021 / Accepted: 22 February 2021 / Published: 26 February 2021
(This article belongs to the Special Issue Pulsed Laser Deposition of Thin Films: Recent Advances and Challenges)
Research on ultrathin quantum materials requires full control of the growth and surface quality of the specimens in order to perform experiments on their atomic structure and electron states leading to ultimate analysis of their intrinsic properties. We report results on epitaxial FeSe thin films grown by pulsed laser deposition (PLD) on CaF2 (001) substrates as obtained by exploiting the advantages of an all-in-situ ultra-high vacuum (UHV) laboratory allowing for direct high-resolution surface analysis by scanning tunnelling microscopy (STM), synchrotron radiation X-ray photoelectron spectroscopy (XPS) and angle-resolved photoemission spectroscopy (ARPES) on fresh surfaces. FeSe PLD growth protocols were fine-tuned by optimizing target-to-substrate distance d and ablation frequency, atomically flat terraces with unit-cell step heights are obtained, overcoming the spiral morphology often observed by others. In-situ ARPES with linearly polarized horizontal and vertical radiation shows hole-like and electron-like pockets at the Γ and M points of the Fermi surface, consistent with previous observations on cleaved single crystal surfaces. The control achieved in growing quantum materials with volatile elements such as Se by in-situ PLD makes it possible to address the fine analysis of the surfaces by in-situ ARPES and XPS. The study opens wide avenues for the PLD based heterostructures as work-bench for the understanding of proximity-driven effects and for the development of prospective devices based on combinations of quantum materials. View Full-Text
Keywords: FeSe; pulsed laser deposition; scanning tunneling microscopy; angle-resolved photoemission spectroscopy FeSe; pulsed laser deposition; scanning tunneling microscopy; angle-resolved photoemission spectroscopy
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MDPI and ACS Style

Chaluvadi, S.K.; Mondal, D.; Bigi, C.; Fujii, J.; Adhikari, R.; Ciancio, R.; Bonanni, A.; Panaccione, G.; Rossi, G.; Vobornik, I.; Orgiani, P. Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Laser. Coatings 2021, 11, 276. https://doi.org/10.3390/coatings11030276

AMA Style

Chaluvadi SK, Mondal D, Bigi C, Fujii J, Adhikari R, Ciancio R, Bonanni A, Panaccione G, Rossi G, Vobornik I, Orgiani P. Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Laser. Coatings. 2021; 11(3):276. https://doi.org/10.3390/coatings11030276

Chicago/Turabian Style

Chaluvadi, Sandeep K.; Mondal, Debashis; Bigi, Chiara; Fujii, Jun; Adhikari, Rajdeep; Ciancio, Regina; Bonanni, Alberta; Panaccione, Giancarlo; Rossi, Giorgio; Vobornik, Ivana; Orgiani, Pasquale. 2021. "Direct-ARPES and STM Investigation of FeSe Thin Film Growth by Nd:YAG Laser" Coatings 11, no. 3: 276. https://doi.org/10.3390/coatings11030276

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