Order Article Reprints

Dai J-J, Liu C-W, Wu S-K, Huynh S-H, Jiang J-G, Yen S-A, Mai TT, Wen H-C, Chou W-C, Hu C-W, et al. Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH₄ Flow Rate of the SiN_x Nano-Mask. Coatings. 2021; 11(1):16. https://doi.org/10.3390/coatings11010016

Dai, Jin-Ji, Cheng-Wei Liu, Ssu-Kuan Wu, Sa-Hoang Huynh, Jhen-Gang Jiang, Sui-An Yen, Thi Thu Mai, Hua-Chiang Wen, Wu-Ching Chou, Chih-Wei Hu, and et al. 2021. "Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH₄ Flow Rate of the SiN_x Nano-Mask" Coatings 11, no. 1: 16. https://doi.org/10.3390/coatings11010016

Dai, J.-J., Liu, C.-W., Wu, S.-K., Huynh, S.-H., Jiang, J.-G., Yen, S.-A., Mai, T. T., Wen, H.-C., Chou, W.-C., Hu, C.-W., & Xuan, R. (2021). Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH₄ Flow Rate of the SiN_x Nano-Mask. Coatings, 11(1), 16. https://doi.org/10.3390/coatings11010016