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Open AccessArticle

Etching Characteristics of SixNy Film on Textured Single Crystalline Silicon Surface Using Ar/CF4 and He/CF4 Surface-Discharge Plasma

1
Department of Electrical Engineering, National Institute of Technology, Ube College, Yamaguchi 755-8555, Japan
2
Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Fukuoka 819-0395, Japan
3
Graduate School of Engineering, Nagaoka University of Technology, Niigata 904-2188, Japan
*
Author to whom correspondence should be addressed.
Coatings 2020, 10(6), 563; https://doi.org/10.3390/coatings10060563
Received: 4 May 2020 / Revised: 5 June 2020 / Accepted: 9 June 2020 / Published: 14 June 2020
(This article belongs to the Special Issue Plasma Surface Engineering)
In this study, we investigated the characteristics of electrode grooves formed by etching silicon nitride (SixNy) films using surface-discharge plasma under Ar/CF4 and He/CF4 gases on the basis of differences in the widths of the electrode grooves etched on the SixNy film. The widths of the grooves etched using Ar as the carrier gas were narrower than those etched using He, and the etching speed achieved using Ar was higher than that achieved using He. Furthermore, the electrode groove created by surface-discharge plasma gradually widened as etching time and applied voltage increased. View Full-Text
Keywords: surface-discharge plasma; maskless etching; electrode groove; silicon; silicon nitride (SixNy) surface-discharge plasma; maskless etching; electrode groove; silicon; silicon nitride (SixNy)
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Hamada, T.; Masuda, S.; Nishida, K.; Yamamoto, S. Etching Characteristics of SixNy Film on Textured Single Crystalline Silicon Surface Using Ar/CF4 and He/CF4 Surface-Discharge Plasma. Coatings 2020, 10, 563.

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