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Open AccessArticle

Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications

Department of Physical Electronics and Technology, Saint Petersburg Electrotechnical University, 197376 Saint-Petersburg, Russia
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Coatings 2020, 10(3), 247; https://doi.org/10.3390/coatings10030247
Received: 24 January 2020 / Revised: 28 February 2020 / Accepted: 1 March 2020 / Published: 7 March 2020
(This article belongs to the Special Issue Ferroelectric Thin Films and Devices)
The ferroelectric barium–strontium titanate (BST) multi-layer structure has been formed directly on silicon carbide by serial deposition and “in situ” annealing of layers. This approach allowed us to achieve the high-quality perovskite lattice of ferroelectric that provides the best combination of high tunability and low losses for BST/SiC structures at microwaves. Electric characteristics of BST/SiC planar capacitor structures were studied under the high level of microwave power for the first time. The BST/SiC structure consisted of highly oriented ferroelectric film on highly heat-conducting substrate have demonstrated the absence of the overheating of the active area of the capacitor under dissipated power density up to 125 W/mm 2 . View Full-Text
Keywords: ferroelectrics; barium strontium titanate; silicon carbide; ion plasma deposition; intermediate annealing; microwave properties; tunability; high microwave power ferroelectrics; barium strontium titanate; silicon carbide; ion plasma deposition; intermediate annealing; microwave properties; tunability; high microwave power
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MDPI and ACS Style

Tumarkin, A.; Gagarin, A.; Zlygostov, M.; Sapego, E.; Altynnikov, A. Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications. Coatings 2020, 10, 247.

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