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Journal: NanomaterialsVolume: 9Number: 1155
Article: Improvement of the Bias Stress Stability in 2D MoS2 and WS2 Transistors with a TiO2 Interfacial Layer
  • Authors:
  • Woojin Park1,†,
  • Yusin Pak2,† and
  • Hye Yeon Jang1
  • et al.
Link: https://www.mdpi.com/2079-4991/9/8/1155

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