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Journal: Nanomaterials, 2019
Volume: 9
Number: 1155
1155
Article: Improvement of the Bias Stress Stability in 2D MoS₂ and WS₂ Transistors with a TiO₂ Interfacial Layer
Authors: by Woojin Park, Yusin Pak, Hye Yeon Jang, Jae Hyeon Nam, Tae Hyeon Kim, Seyoung Oh, Sung Mook Choi, Yonghun Kim and Byungjin Cho
Link: https://www.mdpi.com/2079-4991/9/8/1155

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