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Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates

1
School of Mechanical and Power Engineering, Harbin University of Science and Technology, No. 52, Xuefu Road, Harbin 150080, China
2
Key Laboratory of Microsystems and Microstructure Manufacturing, Ministry of Education, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China
3
College of Engineering, Swansea University, Fabian Way, Swansea SA1 8EN, UK
4
State Key Laboratory of Robotics and System, Harbin Institute of Technology, No. 2 Yikuang Street, Harbin 150080, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(7), 964; https://doi.org/10.3390/nano9070964
Received: 23 May 2019 / Revised: 26 June 2019 / Accepted: 28 June 2019 / Published: 1 July 2019
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Abstract

To realize the applications of graphene in electronics, a large-scale, high-quality, and uniform graphene film should first be placed on the dielectric substrates. Challenges still remain with respect to the current methods for the synthesis graphene directly on the dielectric substrates via chemical vapor deposition, such as a low growth rate and poor quality. Herein, we present an ultrafast method for direct growth of uniform graphene on a silicon dioxide (SiO2/Si) substrate using methanol as the only carbon source. A 1 × 1 cm2 SiO2/Si substrate square was almost fully covered with graphene within 5 min, resulting in a record growth rate of ~33.6 µm/s. This outcome is attributed to the quick pyrolysis of methanol, with the help of trace copper atoms. The as-grown graphene exhibited a highly uniform thickness, with a sheet resistance of 0.9–1.2 kΩ/sq and a hole mobility of up to 115.4 cm2/V·s in air at room temperature. It would be quite suitable for transparent conductive electrodes in electrophoretic displays and may be interesting for related industrial applications. View Full-Text
Keywords: ultrafast growth rate; uniform graphene; silicon dioxide substrate ultrafast growth rate; uniform graphene; silicon dioxide substrate
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Zhou, L.; Wei, S.; Ge, C.; Zhao, C.; Guo, B.; Zhang, J.; Zhao, J. Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates. Nanomaterials 2019, 9, 964.

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