Next Article in Journal
Homogeneous Core/Shell NiMoO4@NiMoO4 and Activated Carbon for High Performance Asymmetric Supercapacitor
Previous Article in Journal
A Comparison Study of Functional Groups (Amine vs. Thiol) for Immobilizing AuNPs on Zeolite Surface
Previous Article in Special Issue
Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures
Open AccessArticle

ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

1
Fraunhofer Institute for Photonic Microsystems, 01099 Dresden, Germany
2
VTT Technical Research Centre of Finland Ltd., 02044 Espoo, Finland
3
School of Chemical Engineering, Aalto University, 02150 Espoo, Finland
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(7), 1035; https://doi.org/10.3390/nano9071035
Received: 30 April 2019 / Revised: 16 July 2019 / Accepted: 16 July 2019 / Published: 19 July 2019
For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds of HAR structures that represent different semiconductor technologies. In the first study, ToF-SIMS is used to illustrate cobalt seed layer corrosion by the copper electrolyte within the large through-silicon-vias (TSVs) before and after copper electroplating. However, due to the sample’s surface topography, ToF-SIMS analysis proved to be difficult due to the geometrical shadowing effects. Henceforth, in the second study, we introduce a new test platform to eliminate the difficulties with the HAR structures, and again, use ToF-SIMS for elemental analysis. We use data image slicing of 3D ToF-SIMS analysis combined with lateral HAR test chips (PillarHall™) to study the uniformity of silicon dopant concentration in atomic layer deposited (ALD) HfO2 thin films. View Full-Text
Keywords: ToF-SIMS 3D imaging; compositional depth profiling; high aspect ratio (HAR) structures; silicon doped hafnium oxide (HSO) ALD deposition; lateral high aspect ratio (LHAR); ToF-SIMS analysis ToF-SIMS 3D imaging; compositional depth profiling; high aspect ratio (HAR) structures; silicon doped hafnium oxide (HSO) ALD deposition; lateral high aspect ratio (LHAR); ToF-SIMS analysis
Show Figures

Figure 1

MDPI and ACS Style

Kia, A.M.; Haufe, N.; Esmaeili, S.; Mart, C.; Utriainen, M.; Puurunen, R.L.; Weinreich, W. ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition. Nanomaterials 2019, 9, 1035.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map

1
Back to TopTop