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Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

1
CENIMAT/I3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia, FCT, Universidade Nova de Lisboa and CEMOP-UNINOVA, Campus da Caparica, 2829-516 Caparica, Portugal
2
Hovione, Campus do Lumiar, Edifício S, Estrada do Paço do Lumiar, 1649-038 Lisboa, Portugal
3
International School of Photonics, Cochin University of Science and Technology, Kochi – 682 022, India
4
C2TN, DECN, Instituto Superior Técnico, Universidade de Lisboa, 2695-066 Bobadela LRS, Portugal
*
Authors to whom correspondence should be addressed.
Nanomaterials 2019, 9(3), 320; https://doi.org/10.3390/nano9030320
Received: 30 December 2018 / Revised: 19 February 2019 / Accepted: 21 February 2019 / Published: 1 March 2019
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Abstract

This work reports on the role of structure and composition on the determination of the performances of p-type SnOx TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (Opp) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies that allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm2 V−1 s−1 and on-off ratio above 7 × 104, operating at the enhancement mode with a saturation voltage of −10 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnOx TFTs with different methods and using different device configurations. View Full-Text
Keywords: p-type TFT; p-type oxide semiconductors; SnO electrical properties; oxide structure analysis p-type TFT; p-type oxide semiconductors; SnO electrical properties; oxide structure analysis
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Barros, R.; Saji, K.J.; Waerenborgh, J.C.; Barquinha, P.; Pereira, L.; Carlos, E.; Martins, R.; Fortunato, E. Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures. Nanomaterials 2019, 9, 320.

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