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Open AccessArticle

Effect of Sputtering Temperature on Fluorocarbon Films: Surface Nanostructure and Fluorine/Carbon Ratio

1
State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Chongqing 400044, China
2
National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology (Xi’an), Xi’an 710100, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(6), 848; https://doi.org/10.3390/nano9060848
Received: 4 May 2019 / Revised: 23 May 2019 / Accepted: 24 May 2019 / Published: 3 June 2019
In this work, fluorocarbon film was deposited on silicon (P/100) substrate using polytetrafluoroethylene (PTFE) as target material at elevated sputtering temperature. Field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were employed to investigate the surface morphology as well as structural and chemical compositions of the deposited film. The surface energy, as well as the polar and dispersion components, were determined by water contact angle (WCA) measurement. The experimental results indicated that increasing sputtering temperature effectively led to higher deposition rate, surface roughness and WCA of the film. It was found that the elevated temperature contributed to increasing saturated components (e.g., C–F2 and C–F3) and decreasing unsaturated components (e.g., C–C and C–CF), thus enhancing the fluorine-to-carbon (F/C) ratio. The results are expected aid in tailoring the design of fluorocarbon films for physicochemical properties. View Full-Text
Keywords: fluorocarbon; surface nanostructure; sputtering temperature; surface properties fluorocarbon; surface nanostructure; sputtering temperature; surface properties
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MDPI and ACS Style

Zhao, Q.; Wang, F.; Wang, K.; Xie, G.; Cui, W.; Li, J. Effect of Sputtering Temperature on Fluorocarbon Films: Surface Nanostructure and Fluorine/Carbon Ratio. Nanomaterials 2019, 9, 848.

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